MT41K512M8RH-107:E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT41K512M8RH-107:E is a dynamic random access memory (DRAM), which is a type of semiconductor memory. It is characterized by high density and low power consumption, making it suitable for a variety of applications. This article will discuss the application field and working principle of the MT41K512M8RH-107:E.

Application Field

The MT41K512M8RH-107:E is a perfect choice for companies that need large amounts of fast, reliable memory without having to pay a fortune. This memory is commonly found in 3D gaming consoles, HD television sets, and digital cameras, as it can be integrated into a variety of devices with limited space. It can also be used in workstations and industrial settings, where its low cost and high speed make it ideal for saving energy costs.

This DRAM is also suitable for use in embedded systems, since its small size makes it easy to incorporate into narrow spaces. Its features such as burst speeds, self-refresh cycles, and high data transfer speeds also make it ideal for use in industrial automation, SCADA systems, and medical device applications.

Working Principle

The MT41K512M8RH-107:E is a synchronous DRAM, which works in tandem with a clock to synchronize the data transmission between the memory and external devices. The memory is made up of cells, each of which consists of two transistors and two capacitors. The transistors control the flow of charge to and from the capacitors, which store a single bit of data as a charge.

When selecting a given cell, charge is sent to the selected cell and stored on the capacitors. When the voltage level reaches a certain threshold, the cell is said to be in a \'1\' or \'0\' state, corresponding to the presence or absence of a given bit. When reading the memory cell, the charge is read out of the cell and the voltage level is compared to a reference voltage, which determines the value of the bit.

The MT41K512M8RH-107:E uses an array of banks, each of which are further divided into rows and columns. All of these separate banks, rows, and columns can be addressed independently, allowing for rapid access of large amounts of data in a very short amount of time. This, coupled with the low power consumption and small physical footprint of the device, makes the MT41K512M8RH-107:E a perfect choice for a variety of applications.

Conclusion

The MT41K512M8RH-107:E is a perfect choice for companies that need high data transfer speeds, low power consumption, and rapid access to fragmented memory in a small physical space. Its low cost also makes it attractive for a variety of applications, and its wide range of features make it ideal for use in embedded systems, medical device applications, and 3D gaming consoles. Due to its easy incorporation into industrial settings and its ability to address a wide array of independent banks, rows, and columns, the MT41K512M8RH-107:E is a perfect choice for any company looking for a powerful, low-cost DRAM solution.

The specific data is subject to PDF, and the above content is for reference