MT46H128M16LFB7-6 WT:B

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46H128M16
Supplier Device Package:	60-VFBGA (10x10)
Package / Case:	60-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-25°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5.0ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	2Gb (128M x 16)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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MT46H128M16LFB7-6 WT:B is a popular memory product used in various electronic devices. It is a type of static random access memory (SRAM) used to store data and instructions in electronic systems. It is a DRAM component which provides improved performance and power efficiency compared to traditional DRAMs. The memory is an ideal solution for high-speed storage and transfer of large amounts of data.The MT46H128M16LFB7-6 WT:B memory chip is a highly versatile device that can be used in various applications. It is an eight-bit device with a maximum capacity of 128 megabytes. The device has a wide range of operating frequencies ranging from 100 MHz to 450 MHz. Its integrated static discharge technology allows it to maintain its performance even at higher frequencies. It has a maximum frequency at 667Mhz. The MT46H128M16LFB7-6 WT:B memory chip can support a large data bandwidth, up to 10.4Gbit/s. It has an ultra-low latency at 4 to 10 cycles and a cycle time of 6.67ns.The MT46H128M16LFB7-6 WT:B memory chip is typically used in high-speed memory applications such as high-performance computers, gaming consoles and embedded systems. It is also suitable for use in high-density applications such as data centers and cloud storage systems. The device is designed to handle a large amount of data efficiently and quickly. It also provides excellent power efficiency and low power consumption.The MT46H128M16LFB7-6 WT:B memory chip has two separate banks: one is a read-only memory (ROM) and the other is a random access memory (RAM). It provides simultaneous reading and writing of data. The ROM is used to store the basic system configuration and other data. The RAM is used to store applications and data.The working principle of the MT46H128M16LFB7-6 WT:B memory chip is similar to that of other SRAMs. It uses a asynchronous SRAM circuit for reading and writing data. It consists of a row address decoder and column address decoder, which decode the address values from the system address bus. It also has sense amplifiers and control logic, which are used to control the memory operation. The memory access time is determined by the system bus clock frequency.The MT46H128M16LFB7-6 WT:B memory chip also has an integrated refresh logic, which refreshes the data during idle periods, ensuring data integrity. The memory also features error correction capabilities, allowing it to detect, correct and report data errors.Overall, the MT46H128M16LFB7-6 WT:B memory chip is a versatile and high-performance memory device. It is ideal for use in high-speed applications such as gaming consoles and in high-density systems such as data centers. It provides excellent power efficiency, low power consumption and fast data access times, making it an ideal choice for memory and storage applications.

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