MT46V128M4FN-5B:F TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important component of modern technology, enabling the swift storage, manipulation and retrieval of data. The range and versatility of memory devices is stunning, with each type providing different capabilities and suitable applications. One example of such a memory device is the MT46V128M4FN-5B:F TR, which is dynamic random-access memory (DRAM) manufactured by Micron Technology. As such, this chip offers incredibly fast storage, available in two flavors for either synchronous or asynchronous operations.

The MT46V128M4FN-5B:F TR is a small yet efficient chip, which fits into a small package of 484-BGA 46-ball. It is built using 90-nm process technology and contains as many as 128 megabytes of memory. It has an operating voltage of 1.8V and an offered speed rating of DDR400 (400 megatransfers per second). The MT46V128M4FN-5B:F TR also has an excellent error-correction system and a voltage-refresh mechanism, which allow the device to retain its data even in changing environments.

Thanks to its amazing speed and small package, the MT46V128M4FN-5B:F TR is perfectly suited for use in devices that require high-performance memory. It can be found in laptops, computers, servers, digital cameras and other products that need powerful storage. It is also used in embedded systems, network interface controllers, encryption modules and other demanding applications.

The core of the MT46V128M4FN-5B:F TR is based on an asynchronous DRAM core, a type of DRAM which works independently from a clock signal. This type of DRAM is characterized by having fast read and write speeds, as data transfers are initiated and controlled by the host system. The storage core also uses a row-column access structure, which means that address lines are provided for each row and each column of data.

The MT46V128M4FN-5B:F TR can be operated in two modes, synchronous or asynchronous. In synchronous mode, signals are synchronized with a clock signal and data is transferred at the rate of the clock signal. This mode is optimized for applications that require quick responses. In asynchronous mode, however, signal timing is not dependent on clock signals, and the control signals are the only reference point for data transfers.

The MT46V128M4FN-5B:F TR also features a variety of data integrity features, to ensure safe storage and retrieval of information. It has an on-die error-correcting code (ECC) which is used to detect and correct data errors before they can be transferred to the external system. It also has a voltage-refreshing mechanism, which ensures that power is applied to the memory array even if there is no activity in the data bus. This ensures that data stored in the array is not lost while the device is inactive.

In conclusion, the MT46V128M4FN-5B:F TR is an impressive DRAM device, offering tremendous data storage and retrieval capabilities in a minimal package. It is suitable for use in high-performance portable devices, embedded systems and demanding applications, and its features and on-die ECC and voltage refresh mechanisms ensure reliable operation. As such, the MT46V128M4FN-5B:F TR provides a great solution for anyone requiring powerful and reliable memory storage.

The specific data is subject to PDF, and the above content is for reference