Allicdata Part #: | 557-1020-2-ND |
Manufacturer Part#: |
MT46V16M16TG-6T:F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 256M PARALLEL 66TSOP |
More Detail: | SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 16... |
DataSheet: | MT46V16M16TG-6T:F TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V16M16 |
Supplier Device Package: | 66-TSOP |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 700ps |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 256Mb (16M x 16) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the most vital parts of modern computing systems, and MT46V16M16TG-6T:F TR is one type of memory device that is widely used in a variety of applications. It is an integrated low power, low voltage Dynamic Random Access Memory (DRAM) device with a maximum clock frequency of 166 MHz. It is an ideal choice for designers who are looking for a high performance and low power memory solution for their applications.
The MT46V16M16TG-6T:F TR is a 16 Megabit (Mbit) device that is built using a 3.2V tolerance CMOS process to make it suitable for a wide range of clock frequencies. It has a small package size and is designed to be very low power so that it can be used in a variety of applications where power efficiency is important. The MT46V16M16TG-6T:F TR has an operating power supply of 2.5V to 3.3V and can operate in temperatures as low as -40 °C and as high as 85 °C.
The MT46V16M16TG-6T:F TR operates on a Multi-bank Architecture (MA) allowing it to access data in multiple banks simultaneously. This type of architecture supports a higher data throughput over a single bank architecture. The device is organized as 4 banks of 4-bit words, allowing access to a total of 32 bits of data at any given time. The device also supports burst modes to increase its data access speed. It has a burst length of 4 and can support both successive and interspersed burst lengths.
The MT46V16M16TG-6T:F TR supports a Self-Refresh mode to reduce power consumption. In Self-Refresh mode, no external commands are used to maintain data integrity and the device uses an internally generated auto-refresh command to maintain the data in its memory cells. The device also supports an Extended Data Out (EDO) mode that allows for faster data transfer between the device and a microcontroller or processor.
The MT46V16M16TG-6T:F TR is a popular memory device for a variety of applications due to its low power consumption and a high performance clock frequency. It can be used in embedded systems, portable devices, notebooks and other mobile computing devices, as well as in consumer electronics. The device is also used in automotive applications, and can be used to store large amount of data with low power consumption. In addition, the MT46V16M16TG-6T:F TR has a wide industrial temperature range making it suitable for use in harsh temperature environments.
In conclusion, the MT46V16M16TG-6T:F TR is an ideal choice for a variety of applications that require both high performance and low power consumption. Its Multi-bank architecture, extended data out mode and self-refresh mode, makes it suitable for a wide range of applications from consumer electronics to automotive and industrial applications. The device is also highly robust and can operate in temperatures from -40 °C to 85 °C, making it ideal for harsh temperature environments.
The specific data is subject to PDF, and the above content is for reference
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MT46V16M8TG-6T L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M8TG-6T IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V128M4TG-6T:D TR | Micron Techn... | 9.85 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4TG-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4FN-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16TG-5B IT:JTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V16M16TG-5B:MTR | Alliance Mem... | -- | 2000 | IC DRAM 256M PARALLEL 66T... |
MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
MT46V128M4FN-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V64M8CV-5B IT:J | Alliance Mem... | 1.68 $ | 1729 | IC DRAM 512M PARALLEL 60F... |
MT46H32M16LFBF-5 IT:C | Micron Techn... | -- | 16971 | IC DRAM 512M PARALLEL 60V... |
MT46V8M16P-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M16P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V16M16P-75:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H16M16LFBF-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H16M16LFBF-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H8M32LFB5-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-6T:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V64M8P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M16BN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M8P-6T:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H16M16LFBF-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H16M32LFCM-6 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFCM-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H32M16LFCK-6 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
MT46H32M16LFCK-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
MT46H32M32LFCM-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46H32M32LFCM-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46H64M16LFCK-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46H64M16LFCK-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46V8M16P-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT46H16M32LFCM-5:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFCM-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
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