MT46H16M32LFB5-6 AT:C TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46H16M32
Supplier Device Package:	90-VFBGA (8x13)
Package / Case:	90-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 105°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5.0ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	512Mb (16M x 32)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Memory is an important part of computer systems and is used to store data and instructions. The type of memory used determines the speed and cost of a system. MT46H16M32LFB5-6 AT:C TR is a synchronous dynamic random access memory (SDRAM) designed for high-speed and high-density applications.

Overview of MT46H16M32LFB5-6 AT:C TR

MT46H16M32LFB5-6 AT:C TR is a Double Data Rate (DDR) SDRAM device with a clock rate of 400MHz. It has a capacity of 512Mb (64Mx8) and is organized as 8M 3x2 bank. MT46H16M32LFB5-6 AT:C TR operates on a 1.8V supply voltage and is packaged in a 48-pin TSOP package.

Features of MT46H16M32LFB5-6 AT:C TR

MT46H16M32LFB5-6 AT:C TR offers several features that make it suitable for a wide range of applications. It has a fast data access time of 2.5ns, allowing it to access data quickly. It also features an internal data register which increases the device’s speed by eliminating the need for external data registers. Additionally, the device supports auto-refresh, which reduces power consumption and improves system performance.

Applications of MT46H16M32LFB5-6 AT:C TR

MT46H16M32LFB5-6 AT:C TR has a wide range of applications and is used in various types of embedded systems, such as digital video recorders, set-top boxes, and industrial PCs. It is also used in mobile devices and laptop computers.

Working Principle of MT46H16M32LFB5-6 AT:C TR

MT46H16M32LFB5-6 AT:C TR uses a synchronous architecture which enables it to access data in a pipelined manner. This means that the device can access data from multiple banks in parallel. The device operates using a clock signal, which is generated by the system. Data is written to and read from the device using a series of command and address signals, which are also generated by the system. The device is organized as 8M 3x2 bank, meaning that the data is arranged into blocks of three bytes at a time. The device uses a page-mode system to store data, which means that data is able to be accessed without having to reload the entire block. This reduces the amount of power consumed when accessing data and improves the device’s performance.

Conclusion

MT46H16M32LFB5-6 AT:C TR is a high-performance SDRAM device that is suitable for a wide range of applications. Its fast data access times and internal data register make it an ideal choice for embedded systems, mobile devices, and laptop computers. The device’s page-mode system allows it to access data quickly while minimizing power consumption.

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