MT46H128M32L2MC-5 WT:B TR Allicdata Electronics
Allicdata Part #:

MT46H128M32L2MC-5WT:BTR-ND

Manufacturer Part#:

MT46H128M32L2MC-5 WT:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 240WFBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 4Gb (128M x 32) Par...
DataSheet: MT46H128M32L2MC-5 WT:B TR datasheetMT46H128M32L2MC-5 WT:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT46H128M32
Supplier Device Package: 240-WFBGA (14x14)
Package / Case: 240-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 1.95 V
Memory Interface: Parallel
Access Time: 5.0ns
Series: --
Clock Frequency: 200MHz
Memory Size: 4Gb (128M x 32)
Technology: SDRAM - Mobile LPDDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory is an important component of any system, and the MT46H128M32L2MC-5WT:B TR is a type of memory device that can meet the requirements of many applications. This article will be discussing the application fields of the MT46H128M32L2MC-5WT:B TR and its working principle.

The MT46H128M32L2MC-5WT:B TR is a double data rate two or four rank registered synchronous dynamic random access memory, or DDR2/4-R SDRAM. It is used for high-end computing applications that require high performance and low power consumption. It has a variety of different options for memory types, memory speed and memory sizes.

The MT46H128M32L2MC-5WT:B TR is used in a variety of computing applications such as graphic processing, AI engine, gaming, simulation, etc. It can also be used in mobile devices, embedded systems, and network communications. This type of memory device is ideal for use in high-end computing applications where power efficiency and data transmission performance are of primary importance.

The working principle of the MT46H128M32L2MC-5WT:B TR is based on the principles of DDR2/4-R SDRAM. This type of memory device consists of four blocks, each block containing eight chips of 8-bit data width, that makes up a total of 32 chips for a total data width of 256 bits. The blocks are connected to a controller through the 72-pin DIMM connector.

Data is stored in the memory chips as a series of charge cell states that are either 0 or 1. A clock signal is sent from the controller to the chips, which determines the speed of the memory device. When a request for data is sent from the controller, the data is read from the memory chip and sent to the controller for processing.

Data is also written to the memory chips via the controller. The data is written to a specific position in the memory chip, using the controller’s address and data signals. The data is then written to the correct address in the chip, which is determined by the controller.

Data is read from the memory chip in an orderly manner, starting from the least significant bits and ending with the most significant bits. This ensures that the data is stored in orderly fashion which makes it easier to find and retrieve data.

The MT46H128M32L2MC-5WT:B TR is designed to provide high-performance, low power consumption and a wide range of options for its application fields. The chips are designed for use in high-end computing applications, where data transfer performance and power efficiency are of primary importance.

The MT46H128M32L2MC-5WT:B TR is a powerful and reliable type of memory device that can be used in a wide range of applications. It is ideal for high-end computing applications where data transfer speed and power efficiency are of utmost importance. It is also ideal for use in mobile devices, embedded systems and network communications.

The specific data is subject to PDF, and the above content is for reference

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