MT46H16M16LFBF-5:H TR Allicdata Electronics
Allicdata Part #:

MT46H16M16LFBF-5:HTR-ND

Manufacturer Part#:

MT46H16M16LFBF-5:H TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 256M PARALLEL 60VFBGA
More Detail: SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Pa...
DataSheet: MT46H16M16LFBF-5:H TR datasheetMT46H16M16LFBF-5:H TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT46H16M16
Supplier Device Package: 60-VFBGA (8x9)
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7 V ~ 1.95 V
Memory Interface: Parallel
Access Time: 5.0ns
Series: --
Clock Frequency: 200MHz
Memory Size: 256Mb (16M x 16)
Technology: SDRAM - Mobile LPDDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The MT46H16M16LFBF-5:H TR is a type of Dynamic Random Access Memory (DRAM) chip. It has a 16M x 16 bit organizaion and is designed for use in high-speed memory slave applications. The MT46H16M16LFBF-5:H TR is a low-voltage device that operates from a single 2.5V or 1.8V supply. It is designed for use in high-speed memory slave applications and uses an advanced write two-cycle algorithm to speed data access.

The MT46H16M16LFBF-5:H TR utilizes a novel type of Current Mode logic (CML) to perform a variety of functions including read, write, and refresh operations. The CML circuitry provides high speed and low power operation. The read and write operations are initiated by a low-voltage, low-power command signal. This signal is received by the command decoder, which then instructs the Memory Array Controller (MAC) to select the desired address. The MAC then sends this address to the appropriate DRAM array.

The read and write operations of the MT46H16M16LFBF-5:H TR rely on the fact that data can be stored in different cell locations on the chip. The CML circuitry first determines whether a particular address on the chip refers to a read or write operation. If it is a read operation, the information stored in the address will be output from the chip via the data bus. For write operations, the data is input to the chip, and then stored in the address specified.

The MT46H16M16LFBF-5:H TR also incorporates a self-refreshing feature. This means that the chip will constantly be refreshing the cells in order to retain the stored data. This is achieved by feeding back the stored data of a particular address to the cell itself, thus refreshing the data stored in each cell at regular intervals. This ensures that the data stored in the DRAM cells is not lost due to leakage currents or other environmental factors.

The MT46H16M16LFBF-5:H TR can be used in a variety of memory slave applications such as digital signal processor (DSP) memory, image processing memory, or memory for embedded or real-time applications. The CML circuitry provided by the MT46H16M16LFBF-5:H TR chip allows for low-power operation, high speed, and high data density. Because of these features, this memory chip is a great choice for memory-intensive applications.

The specific data is subject to PDF, and the above content is for reference

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