MT46H16M32LFCM-5:B TR

Introduction

The MT46H16M32LFCM-5:B TR is a high-speed and high-performance 1-Gb synchronous dynamic random access memory (SDRAM). It is designed using a 5-word burst architecture, with an external data width of 16. The memory is designed to provide a data bandwidth of up to 800 Mbps. The MT46H16M32LFCM-5:B TR is available in TSOP-II form-factor, with a 0.25μm process technology. The on-chip refresh mechanism increases the refresh efficiency. The memory makes use of a Read/Write/Refresh/Precharge command set, which is programmed by a single address and a data bus interface.

Applications

The MT46H16M32LFCM-5:B TR memory is designed to expand the performance and the speed of mobile applications. It is especially suited for applications that require large data transfer capacities and high speed. Some of the key applications of the MT46H16M32LFCM-5:B TR memory include:

• Handheld systems
• Multi-media on PCs and notebooks
• Networking storage systems and servers
• Embedded memory and smart card

Features

• High speed with a maximum bandwidth of 800 Mbps
• Wide data bus of 16-bit
• Advance 5-word burst architecture
• Low power consumption
• On-Chip refresh mechanism

Working Principle

The MT46H16M32LFCM-5:B TR memory works on the principle of synchronous dynamic random access (SDRAM). It is an advanced version of DRAM technology, which has an improved performance in terms of speed and bandwidth. The memory is designed to utilize a Read/Write/Refresh/Precharge command set, which is programmed by the host system. The commands are given in blocks, which are then stored in the memory in the form of a ‘burst’. A burst is basically an orderly sequence of data stored in a row. The memory also utilizes a 5-word burst architecture, which increases the speed of data transfers. In addition, the memory also uses an on-chip refresh system to ensure that the data stored in the memory is always up-to-date and accurate.

Conclusion

The MT46H16M32LFCM-5:B TR memory is designed to provide high performance and high speed. It is suitable for applications in handheld systems, multimedia devices, networking storage systems and embedded memory. The memory makes use of SDRAM technology and is programmed using a Read/Write/Refresh/Precharge command set. In addition, the 5-word burst architecture and on-chip refresh system increase the speed and accuracy of data transfers.