MT46H16M32LFCM-5 IT:B

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Memory technology provides us with the ability to conveniently store data and manipulate it to our needs. Within this technology, DRAM, or dynamic random access memory, is one of the more widely used memories. MT46H16M32LFCM-5 IT:B is a type of DRAM that is specifically designed for mobile applications. This memory incorporates features like low power, low density, wide temperature range and it has an on-die termination (ODT) to address signal integrity issues.

The MT46H16M32LFCM-5 IT:B is a high-performance memory device used for mobile applications such as mobile phones, tablets, notebook PCs and embedded systems. This device uses the DDR2 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) standard, which provides data transmission in two data words per clock cycle. Additionally, MT46H16M32LFCM-5 IT:B is manufactured using an advanced 0.11um process.

In terms of application field, MT46H16M32LFCM-5 IT:B is typically used in mobile computing and embedded systems. The device provides a reliable and highly efficient data transfer rate of up to 533 Mbps. This makes it suitable for various tasks, such as multimedia applications and gaming. Additionally, due to its low-power consumption, it is an ideal choice for battery-powered devices.

MT46H16M32LFCM-5 IT:B features a 64M x 32 bit configuration in which 16 bits multiplexed bidirectional data bus is divided in two parts. The device has a Self Refresh mode and Data Masking support, which improves the stability of the device and offers a secure environment for data storage. It also supports a burst length of four in which two or four consecutive addresses are requested for data load or storing.

MT46H16M32LFCM-5 IT:B uses the DDR2 standard for its operation. The device sends the memory address and data signals over the same bus, which is known as dual-bus architecture. It also supports two types of timing signals: The time per cycle and the refresh cycle. The refresh cycle ensures that the memory cells are kept up to date and operate correctly in the presence of noise and interference in the system.

The device also incorporates several other features such as write pause/burst terminate, clock drift, self refresh power mode and programmable burst counter. The write pause/burst terminate feature allows the user to send commands and data bursts to the memory chip. The clock drift is used to enable the device to operate optimally when exposed to voltage fluctuations and temperature changes. The self refresh power mode allows the device to reduce power consumption when it is not actively executing application tasks. Finally, the programmable burst counter allows for improved access latency when multiple memory chips are in use.

In conclusion, MT46H16M32LFCM-5 IT:B is a high-performance mobile memory device that is ideal for applications such as mobile phones, tablets, notebook PCs and embedded systems. It uses the DDR2 SDRAM standard, which provides reliable and efficient data transfer rates. This device also utilizes several useful features such as write pause/burst terminate, clock drift, self refresh power mode and programmable burst counter. All of these features combined make MT46H16M32LFCM-5 IT:B an ideal choice for a wide range of mobile applications.

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