
Allicdata Part #: | MT46H1DBB5-DC-ND |
Manufacturer Part#: |
MT46H1DBB5-DC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC MOBILE DDR 512M NAX16 FBGA |
More Detail: | Memory IC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Memory
MT46H1DBB5-DC is a type of dynamic random access memory (DRAM) chip produced by South Korean electronic giant, Mosel-Vitelic Corporation. It was designed for use in consumer electronics applications, including portable tablets and game consoles. This DRAM is the latest in a series of DRAM chips produced by Mosel, and is designed to provide memory for a variety of applications and platforms.
Application Field
The MT46H1DBB5-DC is specifically designed to be used in consumer electronics applications, such as portable tablets and gaming consoles. It is compatible with a wide range of platforms, including Apple iOS, Windows Mobile, Windows Embedded and Android. This allows it to provide memory for a variety of devices, including smartphones, tablets and digital cameras. This can also be used in digital televisions and set-top boxes.
The MT46H1DBB5-DC can also be used as an embedded memory chip for aerospace and industrial applications. It is designed to be used in systems that require low-power and high-temperature operation, such as unmanned aerial vehicles, avionics and industrial controllers. This DRAM is also ideal for automotive and medical applications, as it provides the necessary memory and stability required for these applications.
Working Principle
The MT46H1DBB5-DC is a type of DRAM that uses a cell-based architecture to store information. This means that the DRAM is composed of tiny cells that are each individually addressable and can be used to store data. Each cell contains two capacitors and one transistor. The capacitors are used to store electrical charges which represent the \'1\'s and \'0\'s of the digital memory and the transistor acts as a switch to control the behavior of the capacitors and the data stored in them.
The MT46H1DBB5-DC uses a symmetrical read/write cycle for powering up and accessing information. This means that each read cycle causes a voltage to be applied to the DRAM chip throughout the cycle. This voltage is then used to power up the circuit and to write data into the DRAM cell. The MT46H1DBB5-DC also uses a sense amplifier circuit to detect the voltage differences between cells, thus allowing the chip to read or write data.
In order to access the information stored in the cells, the MT46H1DBB5-DC uses a number of address and data multiplexers. These multiplexers are used to connect the address and data inputs of the device to the appropriate cell. The multiplexers can also be used to create virtual memory banks, allowing multiple memory locations to be read or written in a single operation.
The MT46H1DBB5-DC is designed to be highly reliable, making it an ideal choice for use in critical applications. It is designed to operate at temperatures ranging from 0 to 70 degrees celsius and has an operating power of 2.5 volts. It is also manufactured using the latest in semiconductor fabrication techniques, ensuring that it can operate reliably in extreme environments.
In conclusion, the MT46H1DBB5-DC is a DRAM chip designed for use in consumer electronics applications, including portable tablets and gaming consoles. It is also used in industrial and aerospace applications, such as unmanned aerial vehicles and avionics. The MT46H1DBB5-DC is composed of tiny cells that are individually addressable, and which use a read/write cycle to access data stored within. It is also highly reliable, making it an ideal choice for use in critical applications.
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