MT46H256M32R4JV-5 WT:B

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46H256M32
Supplier Device Package:	168-VFBGA (12x12)
Package / Case:	168-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-25°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5.0ns
Series:	--
Clock Frequency:	200MHz
Memory Size:	8Gb (256M x 32)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction

MT46H256M32R4JV-5WT:B is a synchronous DRAM (SDRAM) chip which belongs to the Memory category. It is manufactured by Micron Technology Inc. The Memory chips are used in computer systems and other related applications to store data temporarily. The MT46H256M32R4JV-5WT:B is an advanced version of SDRAM which offers improved performance, higher storage capacity and faster data processing.

Application Fields

The watertight MT46H256M32R4JV-5WT:B is primarily used in mission critical applications such as aerospace, medical, military and other high-end industrial applications. The chip is designed with a 16-bit data bus, allowing for a faster transfer rate than the traditional 8-bit data bus. It has a 64 Mb density and a temperature ranges from 0°C to 70°C. It also supports double data rate (DDR) technology with a bus speed of 400MHz or 533MHz.The MT46H256M32R4JV-5WT:B is mainly used in notebooks, tablets, and other mobile computing devices. It is also used in servers and embedded systems. In addition to this, it can also be found in other high-end computing applications such as artificial intelligence (AI) systems, robotics and virtual reality (VR).

Working Principle

The MT46H256M32R4JV-5WT:B follows the synchronous DRAM design architecture. It uses a clock signal to synchronize data transfer operations, instead of the traditional asynchronous approach. As a result, data can be transferred faster than its asynchronous counterparts. This technology is referred to as double data rate (DDR).The chip also employs a Inter-DIMM Access Protocol (IDAP) which allows multiple DIMMs to be connected together. This allows for a large increase in the overall system size and flexibility. The chip is also equipped with a built-in error correction code (ECC) to ensure data accuracy and reliability during data transfers. The MT46H256M32R4JV-5WT:B has additional features such as power management, device temperature sensing, and dynamic random-access memory (DRAM) refresh.

Conclusion

The MT46H256M32R4JV-5WT:B is an advanced SDRAM chip which can be used in a wide variety of applications. The chip incorporates advanced technologies such as DDR, IDAP and ECC, making it a reliable and efficient solution for mission critical applications. With its faster data transfer rates, more storage capacity and improved power efficiency, the MT46H256M32R4JV-5WT:B is a great choice for high-end computing applications.

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