MT46H32M16LFBF-6 IT:B TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46H32M16
Supplier Device Package:	60-VFBGA (8x9)
Package / Case:	60-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5.0ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	512Mb (32M x 16)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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An Introduction to the MT46H32M16LFBF-6 IT:B TR Memory

The MT46H32M16LFBF-6 IT:B TR is a type of synchronous dynamic random-access memory (SDRAM) that is used in a variety of applications. This memory is manufactured by Micron Technology, and it has a versatile range of features that make it suitable for a wide range of tasks. In this article, we will explore the application fields of the MT46H32M16LFBF-6 IT:B TR memory, as well as the working principles behind it.

Application Fields

The MT46H32M16LFBF-6 IT:B TR memory is designed to be a high-performance memory option for a variety of tasks. It is commonly used in embedded systems such as automotive electronics, medical applications, and consumer electronics, as well as in data centers and cloud computing. It is also used in digital signal processing, artificial intelligence, machine learning, and other data-intensive applications. In addition, this memory is also suitable for applications requiring wide temperature ranges, as it is able to operate in temperatures between -40°C and 85°C.

Working Principle

At its core, the MT46H32M16LFBF-6 IT:B TR memory is based on synchronous dynamic random-access memory (SDRAM) technology. This type of memory is designed to provide a large amount of high-speed data storage in a small package. It works by storing data in small cells called memory cells that are connected to a common address and data bus. To access data from a particular memory cell, a command must be sent to the address and data bus. This command will then cause the data from the memory cell to be transferred onto the bus, where it can be accessed by the processor.In addition to its data access capabilities, the MT46H32M16LFBF-6 IT:B TR memory also uses a technology called a "prefetch buffer" to increase the speed of data access. This prefetch buffer uses a process called "pipeline burst" access to fetch data from multiple memory cells in a single cycle. This reduces the amount of time needed to access the data, allowing for faster data transfer.The MT46H32M16LFBF-6 IT:B TR also features an on-die error correction code (ECC) that is designed to help reduce memory errors. This type of ECC works by storing an additional set of data bits that are used to detect and correct any errors in the stored data. This allows for greater accuracy and reliability when working with memory data.

Conclusion

The MT46H32M16LFBF-6 IT:B TR memory is a type of synchronous dynamic random-access memory (SDRAM) that is designed for a variety of applications. With its wide temperature range and on-die error correction code, the MT46H32M16LFBF-6 IT:B TR is a versatile, high-performance memory option for tasks ranging from embedded systems to data-intensive applications. Its data access is further enhanced by a prefetch buffer and pipeline burst access which helps to increase the speed of data transfers.

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