MT46H4M32LFB5-5:K

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MT46H4M32LFB5-5:K is a memory device produced by Micron Technology. It is a Double Data Rate 3 Synchronous Dynamic Random Access Memory (DDR3 SDRAM) and is part of Micron’s Mobile DRAM family. The device is available in both a 4 Gb density as well as an 8 Gb density. The device is ideal for use in a number of applications, including laptops, desktops, digital cameras, tablets and embedded systems. The MT46H4M32LFB5-5:K is a high-speed synchronous Dynamic Random Access Memory (SDRAM) and features two independent internal memory banks for more efficient system operation.

The MT46H4M32LFB5-5:K is a 3.3V device and operates on a 64-bit wide data bus. It offers a maximum clock frequency of 1600 MHz and is organized into 16M x 64-bit, with a total of 16,384 rows and 64 columns. The device also has a built-in register-based selectable burst length of 4 and 8 in both normal and interleaved mode. The device also has a self-refresh rate of 8,192 cycles, allowing it to retain the contents of the DRAM array, even when the power is turned off.

The MT46H4M32LFB5-5:K utilizes a DDR3 SDRAM architecture. This architecture is based on a “double data rate” design, which means that data is transmitted twice as fast as conventional SDRAMs. The device has two primary operations, “read” and “write”, which occur simultaneously in sequence. When a read operation is performed, data is read from the memory array and is sent to the memory controller. When a write operation is performed, data is written to the memory array from the controller.

The MT46H4M32LFB5-5:K utilizes several features to improve performance. It includes a powerful 5-stage pre-fetch buffer and a low-latency access cycle, reducing the amount of system wait-time for access to the device\'s memory. The device also utilizes on-die ECC (Error Correction Code) to detect and correct errors during data read and write operations, allowing for a greater level of data integrity and reliability. Additionally, the device has built-in temperature, voltage and current monitoring capabilities, which allow it to detect when it is being pushed beyond its operational limits.

The MT46H4M32LFB5-5:K is ideal for use in a number of applications, including gaming consoles, media-rich computing platforms, 3D imaging and animation, servers, storage systems and data centers. Its low-latency access cycle, high-speed operation and built-in error-correction capabilities make the MT46H4M32LFB5-5:K an excellent choice for memory-intensive applications. Additionally, its temperature, voltage and current monitoring capabilities help ensure its reliable operation, even when pushed beyond its optimal operating conditions. The MT46H4M32LFB5-5:K is a reliable and powerful memory solution for modern computing applications.

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