| Allicdata Part #: | MT46H64M32LFCX-5WT:BTR-ND |
| Manufacturer Part#: |
MT46H64M32LFCX-5 WT:B TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 2G PARALLEL 90VFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Para... |
| DataSheet: |  MT46H64M32LFCX-5 WT:B TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT46H64M32 |
| Supplier Device Package: | 90-VFBGA (9x13) |
| Package / Case: | 90-VFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -25°C ~ 85°C (TA) |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Memory Interface: | Parallel |
| Access Time: | 5.0ns |
| Series: | -- |
| Clock Frequency: | 200MHz |
| Memory Size: | 2Gb (64M x 32) |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Memory: MT46H64M32LFCX-5WT:B TR Application Field and Working Principle
MT46H64M32LFCX-5WT:B TR is a type of DRAM chip module. DRAM (Dynamic Random Access Memory) is one of the core memory components used in various computer systems, which stores data and instructions temporarily. Specifically, MT46H64M32LFCX-5WT:B TR is a pseudo-SRAM (Static Random Access Memory) device with a synchronous interface, which uses both DDR2 and DDR3 to transmit data. Compared with traditional SRAM, pseudo-SRAM operating voltage is lower and stability is higher, making it widely used in many applications.
Application Field
MT46H64M32LFCX-5WT:BTR can be applied in many different fields. For example, MT46H64M32LFCX-5WT:BTR works as a buffer memory between CPUs, ASICs and other components, which can improve the rate of data input and output, while reducing power consumption. It can also be used in embedded systems, industrial control systems and automotive electronics, where it can act as a caching memory to store data, provide fast access time and reduce power consumption. In addition, MT46H64M32LFCX-5WT:BTR can be used in some main memory applications such as data acquisition, display control and image indexing.
Working Principle
The working principle of MT46H64M32LFCX-5WT:BTR is based on synchronous DRAM technology. This chip module consists of two parts, a pseudo-SRAM data array and a separate controller. The pseudo-SRAM data array consists of several banks of memory cells, which form a grid of 8K (1024 × 8) words. The data array is connected to the controller via synchronous bidirectional bus. The controller can receive commands, decode them, and then access the memory array according to the interpreted commands to allow the data to be read or written. After the data is read or write, it is transmitted to the external devices through the synchronous data bus.
Summary
To summarize, MT46H64M32LFCX-5WT:BTR is a type of DRAM chip module with a synchronous interface, which uses both DDR2 and DDR3 to transmit data. It is widely used in various applications such as buffer memory between CPUs, ASICs and other components, embedded systems and industrial control systems. The working principle of MT46H64M32LFCX-5WT:BTR mainly depends on its synchronous DRAM technology, which is composed of a pseudo-SRAM data array and a separate controller.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT46H64M32L2CG-5 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 152VF... |
| MT46H64M32L2CG-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 152VF... |
| MT46H16M32LFB5-6 AT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V16M16TG-6T:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H8M16LFCF-75 IT | Micron Techn... | -- | 1000 | IC DRAM 128M PARALLEL 60V... |
| MT46V64M16P-75:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V256M4TG-75:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V64M8TG-75E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M16TG-6T IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H16M16LFBF-5:H | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
| MT46H32M32LFB5-48 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
| MT46V32M4P-6T:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| MT46V32M16BN-75:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H16M16LFBF-6 AT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
| MT46H64M32LFCX-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46H32M32LFB5-5 AT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
| MT46V64M8TG-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H16M32LFCM-6 L IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H256M32L4JV-5 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 168VF... |
| MT46V32M16TG-6T IT:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V128M4FN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16P-75:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H32M32LFB5-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
| MT46V32M16P-5B IT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H16M32LFB5-6 AIT:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V64M16P-6T:A | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V64M8P-6T:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V32M16P-5B IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V32M8P-5B L:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8TG-5B:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
| MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V8M16P-6TIT:DTR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| MT46H16M32LFCM-6 L IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H16M32LFB5-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H128M32L2MC-6 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240WF... |
| MT46V64M8CV-5B IT:J | Alliance Mem... | 1.68 $ | 1729 | IC DRAM 512M PARALLEL 60F... |
| MT46H32M32LFJG-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168VF... |
| MT46V32M16P-6T L IT:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
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