MT46V128M4FN-75:D

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Memory is a type of computer storage that can record and retrieve stored information ranging from small amounts of data to large amounts of information. Memory is an important part of modern computing and is used widely in various applications and devices. Memory can be either volatile or nonvolatile depending on the type of application for which it is used. The MT46V128M4FN-75 memory device is a non-volatile memory device and is widely used in consumer electronics and embedded systems.

Application Field of the MT46V128M4FN-75 Memory

The MT46V128M4FN-75 is a 128-Megabit (Mb) Non-Volatile Memory (NVM) device that is manufactured and sold by Micron Technology. The device is mainly used in consumer electronics, embedded systems, and mobile communications. The device has the capability to store up to 16-Million bytes of data and has a maximum clock speed of 133-MHz. It also features a Single Data Rate (SDR) interface with a burst length of 4. The device also offers an industry-leading low power consumption rate of 6-mW for a single 128meg x 16-Megabyte configuration.

The MT46V128M4FN-75 memory device is ideal for applications that require a low power, high-density storage solution such as automotive navigation systems, digital cameras, camcorders, and other consumer electronic devices. It is also well-suited for embedded systems such as medical instrumentation, machine vision, and industrial controllers.

Working Principle of the MT46V128M4FN-75 Memory

The MT46V128M4FN-75 uses a Non-Volatile Random Access Memory (NV-RAM) cell structure to store data. The device is also an asynchronous (RAM) device, so it does not require a clock signal in order to operate. The cell structure is based on two transistors with one gate shared between them. The first transistor acts as a WRITE device and is used to write data to the cell. The second transistor is used to read data from the cell. To write data to the cell, the gate is charged to a specific voltage. The data is then written to the cell by discharging the gate. To read data from the cell, the gate is charged to the same voltage and the data is read by measuring the current that is flowing across the transistors.

The MT46V128M4FN-75 memory device is also designed with built-in error protection. This protection is designed to prevent data errors due to power fluctuations and other external interferences. It utilizes error correcting code (ECC), cyclic redundancy check (CRC), and error detection code (EDC) algorithms to detect and correct any data errors. The device also offers multiple-bank architecture, providing extra protection against soft errors (errors caused by transient voltage drops).

In conclusion, the MT46V128M4FN-75 is a non-volatile memory device that is used in a variety of applications and devices. The device uses a non-volatile RAM cell structure to store data, and is capable of storing up to 16-Million bytes of data. It has an industry-leading low power consumption rate, and features multiple error detection and correction algorithms. It is ideal for automotive navigation systems, digital cameras, camcorders, and other consumer electronic devices, as well as embedded systems such as medical instrumentation, machine vision, and industrial controllers.

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