
Allicdata Part #: | MT46V256M4TG-6T:ATR-ND |
Manufacturer Part#: |
MT46V256M4TG-6T:A TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 1G PARALLEL 66TSOP |
More Detail: | SDRAM - DDR Memory IC 1Gb (256M x 4) Parallel 167M... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V256M4 |
Supplier Device Package: | 66-TSOP |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 700ps |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 1Gb (256M x 4) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The term "memory" refers to any type of device that stores information. Memory can be used to store computer programs, data, videos, images, and other types of digital content. The memory devices can be classified according to their type and their capacity. The most common types of memory are Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM) and Non-volatile Random Access Memory (NVRAM). Some specialized memory types are Flash memory, Programmable Read-Only Memory (PROM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Pseudo-Static Random Access Memory (PSRAM) and magnetic RAM.MT46V256M4TG-6T:A TR is a DRAM technology which belongs to the memory family.
MT46V256M4TG-6T:A TR is a double data rate SDRAM, first introduced by the company Micron in 2019. It is mainly used in servers, storage systems, embedded systems and other high-performance computing applications. The device has a capacity of 256 Mbits, and a clock frequency of 800MHz. The device is equipped with an error correction code (ECC) feature, which helps in detecting and correcting memory errors.
The device is built on the 0.18-micron design process, allowing it to achieve a higher storage density and lower power consumption. It supports an 8-channel narrow data transfer, with a burst length of 8 and a CAS latency of 3 clock cycles. It has an operating temperature range from 0 to 95 degree Celsius and is packaged in an FBGA(Fine-pitched Ball Grid Array) package.
The main application of MT46V256M4TG-6T:A TR DRAM is its use in high-performance embedded systems and storage servers. It provides a high-bandwidth, low-latency architecture, which is essential for the efficient operation of these systems. In addition, its small form factor provides extra flexibility for designers.
The working principle of MT46V256M4TG-6T:A TR is based on the use of a special type of memory device called a dual-port static random access memory (DRAM). This device is a non-volatile random access memory device, which retains its data even when its power supply is turned off. It consists of two ports, each connected to different memory chips. The first port is used for writing data in the form of an address, while the second port is used for reading data from the device. The data is retrieved by first sending a read command to the device, followed by the address of the particular memory chip. The data is then read from the memory chip and sent to the device.
In addition to its use in embedded systems and storage servers, MT46V256M4TG-6T:A TR is also used in systems that require access to large amounts of data in a short amount of time. It provides an efficient solution to these applications, as it can access data at speeds of up to 800MHz. This makes it an ideal choice for applications such as network routers and switches, video surveillance systems and other time-sensitive applications.
In conclusion, MT46V256M4TG-6T:A TR is a DRAM device designed for high-performance embedded systems and storage servers. It is equipped with an ECC feature for error checking and correction, and its small form factor makes it suitable for applications where space is limited. Its high-bandwidth, low-latency architecture makes it an ideal choice for time-sensitive applications and data-intensive applications.
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MT46V32M16P-5B IT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFB5-6 AIT:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 90V... |
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