MT46V32M16BN-75:C Allicdata Electronics
Allicdata Part #:

MT46V32M16BN-75:C-ND

Manufacturer Part#:

MT46V32M16BN-75:C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 60FBGA
More Detail: SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 13...
DataSheet: MT46V32M16BN-75:C datasheetMT46V32M16BN-75:C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT46V32M16
Supplier Device Package: 60-FBGA (10x12.5)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3 V ~ 2.7 V
Memory Interface: Parallel
Access Time: 750ps
Series: --
Clock Frequency: 133MHz
Memory Size: 512Mb (32M x 16)
Technology: SDRAM - DDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is a very important component of many computer systems, and one of the most commonly used devices is the MT46V32M16BN-75:C, a DDR3 SDRAM (Double Data Rate Three Synchronous Dynamic Random Access Memory). The MT46V32M16BN-75:C is a 32-Mbit device, organized as 4 x 8K x 16 bits, and is available in an 80-ball Monolithic Ceramic Ball Grid Array (BGA) package. It offers fast read performance, a low power supply current, and a robust design.

The MT46V32M16BN-75:C has a wide range of applications due to its high density, low power, and fast speed. It is commonly used in embedded systems, FPGAs, computer servers, and various networking devices. It is also used for storage of code, data, or instructions for various applications. Additionally, the MT46V32M16BN-75:C is often used in high end computing solutions and industrial applications that require high throughput and reliability.

To understand the working principle of the MT46V32M16BN-75:C, it\'s important to understand how DDR3 SDRAM works. The MT46V32M16BN-75:C is a highly reliable, fully synchronous memory device that uses an internal write queue and a dedicated burst counter to ensure that data is read and written in a predictable manner. When a write operation is initiated, the write data is stored in the dedicated write queue and the burst counter is incremented. When the burst counter reaches its maximum value, the write operation is completed. Similarly, a read operation is initiated and the burst counter is used to facilitate data transfer from the memory device.

The MT46V32M16BN-75:C also supports various error-correcting mechanisms such as an Advanced Error Sensor (AES) and a Write Through Policy (WTP). The AES is used to detect and correct errors in both data and address bus transactions, while the WTP ensures that data is written synchronously and reliably.

The MT46V32M16BN-75:C has a variety of features to help optimize system performance and minimize power consumption. The device supports read latency of 2 clocks, a CAS latency of 11 clocks, and a low power shutdown mode. Additionally, the device supports multiple bank modes and self-refresh modes to reduce power consumption further.

Overall, the MT46V32M16BN-75:C is an excellent device for a wide range of applications. The device offers a high level of reliability, fast speed, and low power consumption which make it an ideal choice for embedded systems, FPGAs, and other high-performance computing solutions.

The specific data is subject to PDF, and the above content is for reference

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