
Allicdata Part #: | MT46V32M16BN-75L:C-ND |
Manufacturer Part#: |
MT46V32M16BN-75 L:C |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 60FBGA |
More Detail: | SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 13... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V32M16 |
Supplier Device Package: | 60-FBGA (10x12.5) |
Package / Case: | 60-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 750ps |
Series: | -- |
Clock Frequency: | 133MHz |
Memory Size: | 512Mb (32M x 16) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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Memory is an essential component of modern computers and smartphones. It stores programs and data that are essential for the operation of the device. Without memory, it would be impossible to use a computer or a smartphone. In this article, we will be discussing the MT46V32M16BN-75 L:C memory and its application field and working principle.
The MT46V32M16BN-75 L:C is a DDR SDRAM chip manufactured by Micron Technology. It is a 16-bit wide, 64M × 32 banks, sync-burst counter architecture memory chip which is pin and register compatible with the JEDEC SDRAM standard. It has a low-power operation with a maximum CAS latency of 3T. The memory controller manages the functions of all interfacing devices, allowing for significantly more efficient power management and greater data accuracy.
The MT46V32M16BN-75 L:C is widely used in embedded applications such as automotive, networking, gaming, broadcast, and medical markets. It is also used in industrial process controllers and robotics. In these applications, the memory can provide faster data access and higher throughput, requiring fewer read-write cycles to fetch and store data.
The MT46V32M16BN-75 L:C works using the same basic principles as other types of SDRAM. It utilizes a four-transistor and two-capacitor (4T2C) memory cell to store data. The memory cell consists of two capacitors, one for storing a 1 bit and one for storing a 0 bit, and four transistors for controlling read and write operations. The four associated transistors are used to control the flow of data in and out of the memory cell. Data can be written to or read from the cell by turning the transistors on or off.
The MT46V32M168N-75 L:C is also equipped with a synchronous circuit which allows for increased data accuracy. The synchronous circuit organizes data into words and controls the timing of the data transfers within a word. With this, data can be read and written at a higher speed without any loss of information. This also reduces power consumption by allowing the memory chip to sleep between accesses.
The MT46V32M16BN-75 L:C is an essential component in modern electronics. It offers greater speed and accuracy than traditional SDRAM, making it ideal for embedded applications such as medical, automotive, and industrial process controllers. By providing faster access and higher data throughput, the MT46V32M16BN-75 L:C can result in a cheaper and more efficient product.
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MT46V32M4P-6T:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M16BN-75:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46H16M16LFBF-6 AT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H64M32LFCX-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
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MT46V64M8TG-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFCM-6 L IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
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MT46V32M16TG-6T IT:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4FN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
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MT46H32M32LFB5-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V32M16P-5B IT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFB5-6 AIT:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46V64M16P-6T:A | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 66TSO... |
MT46V64M8P-6T:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-5B IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M8P-5B L:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46V64M8TG-5B:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V8M16P-6TIT:DTR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
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