MT46V32M16FN-6:C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT46V32M16FN-6:C Memory Application Field and Working Principle

The MT46V32M16FN-6:C is a synchronous dynamic random access memory (SDRAM) primarily used in embedded systems applications. It has a single device rating of 6:C, and is made up of sixteen 2M x 16-bit DRAM banks. The memory device is capable of operating at a frequency of up to 133MHz, with a total clock speed of 266MHz. It is designed to store data storage in single subsys-size packages.

The MT46V32M16FN-6:C is typically used in consumer electronics, such as digital video cameras, gaming consoles, set-top boxes, and other applications that require large amounts of data storage. It is also commonly used in industrial applications for machine control and robotics, as well as for more specialized applications such as imaging, streaming media, and security.

The MT46V32M16FN-6:C utilizes an advanced synchronous DRAM architecture to achieve low power consumption and high performance. This SDRAM operates with a clock frequency of 266MHz, allowing it to transfer data at a rate of up to 4.2Gbps. The memory can be configured to be accessed/refreshed in either an asynchronous or synchronous manner, depending on application requirements. It also offers an on-chip temperature sensor and an optional externally controlled on-chip thermal shutoff, making it an ideal choice for temperature sensitive applications.

The MT46V32M16FN-6:C memory utilizes a variety of features to ensure the highest level of performance, such as a Burst Counter and Command Register. The Burst Count, which is located within the Programmable Burst Length Register (PBRL), is used to determine the number of clock cycles between each burst read or write operation. The Command Register stores commands for the DRAM to process, and allows for a range of functionalities such as page mode, read/write, column address strobe (CAS) latency, precharge, and power down/auto-refresh.

The memory device supports a range of data formats, including Page Mode and Asynchronous Page Mode. The Page Mode allows two consecutive R/W operations to take place within the same row, while the Asynchronous Page Mode can be used to read or write multiple columns within the same row. This memory device also supports four online refresh cycles per bank, allowing data to be refreshed at regular intervals to ensure data integrity.

The MT46V32M16FN-6:C is made up of sixteen 2M x 16-bit DRAM banks, each having two read/write ports. This device requires an external serial peripheral interface (SPI) interface for configuration and programming, as well as external DRAM bus control logic for DRAM access operations. It also requires a conventional voltage supply of 3.3V, plus the addition of a single supply of 2.5V for row addressing. Finally, an on-chip temperature sensor provides temperature related information and feedback.

The MT46V32M16FN-6:C memory is a high-bandwidth, cost-effective memory solution for embedded applications. It offers superior performance in a single device, with the added benefits of low power consumption, high speed, and reliable temperature management. It is an ideal choice for a wide range of embedded applications, from digital video cameras to industrial automation.

The specific data is subject to PDF, and the above content is for reference