MT46V64M8BN-6 IT:F TR Allicdata Electronics
Allicdata Part #:

MT46V64M8BN-6IT:FTR-ND

Manufacturer Part#:

MT46V64M8BN-6 IT:F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 60FBGA
More Detail: SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 167...
DataSheet: MT46V64M8BN-6 IT:F TR datasheetMT46V64M8BN-6 IT:F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT46V64M8
Supplier Device Package: 60-FBGA (10x12.5)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3 V ~ 2.7 V
Memory Interface: Parallel
Access Time: 700ps
Series: --
Clock Frequency: 167MHz
Memory Size: 512Mb (64M x 8)
Technology: SDRAM - DDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory: MT46V64M8BN-6 IT:F TR Application Field and Working Principle

MT46V64M8BN-6 IT:F TR is one of the most advanced memory devices available in the current market. This memory chip consists of 8 megabytes of memory, with 128Mbit organization and integrated transfer rate of 6. It is a double-data rate synchronous dynamic random-access memory that uses a write-transfer protocol. The MT46V64M8BN-6 IT:F TR is designed for next-generation memory applications and is suitable for embedded and mobile applications.

This device is designed to provide high data transfer rates for a wide range of applications. It supports JEDEC standard long-term data retention and low power operation. The MT46V64M8BN-6 IT:F TR offers features such as on-chip ECC (Error Correction Code) to ensure reliable data transmission. In addition, it has an on-chip register and an on-chip monitor timer to improve system performance and reliability.

The MT46V64M8BN-6 IT:F TR is a high-density and highly-scalable memory device that is compatible with a variety of microcontroller systems. It is ideal for a wide range of applications such as embedded systems, automotive, medical, industrial and communication systems. The memory device uses a single voltage-buffered interface and provides up to 6.6GB/s of bandwith. It also has a power management unit for low-power states.

The device works by utilizing a write-transfer protocol to read and write data from the memory. This protocol uses an address latch to store the address of the data being written. This address is then sent to the memory and the data is written. The device can then read data from the memory and transfer it to the processor. The process can be repeated as needed.

The MT46V64M8BN-6 IT:F TR memory device also provides flexible memory capabilities. The device can be configured to support different organization and size configurations. This means that the memory device can be used to build a variety of complex applications. This is ideal for any application that needs robust memory capabilities and performance.

The MT46V64M8BN-6 IT:F TR memory device is the ideal choice for applications that require a high-performance, high-density, and low-power solution. It is designed to provide reliable data transmission and meets or exceeds the JEDEC standard for long-term data retention. It is also highly scalable and can be used for a variety of memory configurations.

The specific data is subject to PDF, and the above content is for reference

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