
Allicdata Part #: | MT46V64M8BN-75:D-ND |
Manufacturer Part#: |
MT46V64M8BN-75:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 60FBGA |
More Detail: | SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 133... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V64M8 |
Supplier Device Package: | 60-FBGA (10x12.5) |
Package / Case: | 60-TFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 750ps |
Series: | -- |
Clock Frequency: | 133MHz |
Memory Size: | 512Mb (64M x 8) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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The MT46V64M8BN-75:D is a type of memory. It has a wide variety of applications, and is a reliable and efficient solution for many types of data storage needs. It is a type of random access memory (RAM) that is used in many different types of computing systems, from laptops to servers. Its uses range from primary storage for real-time operations in embedded systems, to general data storage needs such as caching, buffering, and backup. In this article, we will discuss the application fields and working principle of the MT46V64M8BN-75:D.
Application Fields of MT46V64M8BN-75:D
The MT46V64M8BN-75:D is a versatile memory that can be used in a variety of systems and devices. It is used in embedded systems due to its fast access times, which are necessary for efficient real-time operations. It is also well-suited for use in general data storage applications, as it is capable of storing large amounts of data quickly and reliably. It can be used in applications such as RAID arrays, caching, and buffering, as well as for primary storage for large databases and enterprise applications.
The MT46V64M8BN-75:D is also well-suited for use in embedded systems due to its low power consumption. It is a type of SDRAM, meaning that it can operate at a lower voltage than many other types of memory. This makes it a great choice for applications where battery life is a key consideration.
The MT46V64M8BN-75:D is also extremely reliable, making it ideal for use in applications where data security is a concern. It is a type of error-correcting memory, meaning that it is designed to correct any errors it detects in data before it is written or read. This provides extra peace of mind for users as their data will remain safe and secure.
Working Principle of MT46V64M8BN-75:D
The MT46V64M8BN-75:D is a type of SDRAM, meaning that it operates at a lower voltage than many other types of memory. It achieves this low voltage by utilizing a multiphase clock signal instead of a single clock signal. This multiphase clock signal is synchronized in such a way that it is capable of performing multiple operations at once, reducing the overall energy consumption of the memory.
The MT46V64M8BN-75:D operates by a system of bank and column addresses. When the memory is used, the CPU sends out a bank address, followed by a column address. The memory then reads or writes the data from the desired bank and column. This system is known as “burst” or “pipelined” access, and is extremely efficient for applications that involve large quantities of continuous data.
In addition to this, the MT46V64M8BN-75:D includes Error Correcting Code (ECC) technology. This technology allows the memory to detect and correct any errors before they are written or read, ensuring that no corrupted data can enter or be stored within the memory. ECC also allows for higher reliability, as errors can be easily corrected without damaging data.
Conclusion
The MT46V64M8BN-75:D is a reliable and efficient type of memory that has a variety of applications. It is well-suited for use in embedded systems due to its fast access times and low power consumption. It can also be used in general data storage applications such as caching, buffering, and backup. In addition, the MT46V64M8BN-75:D includes ECC technology, ensuring data integrity and reliability.
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MT46V64M8TG-75E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
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MT46H16M16LFBF-5:H | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H32M32LFB5-48 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V32M4P-6T:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M16BN-75:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46H16M16LFBF-6 AT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H64M32LFCX-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
MT46H32M32LFB5-5 AT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V64M8TG-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFCM-6 L IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H256M32L4JV-5 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 168VF... |
MT46V32M16TG-6T IT:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4FN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V16M16P-75:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H32M32LFB5-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V32M16P-5B IT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFB5-6 AIT:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46V64M16P-6T:A | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 66TSO... |
MT46V64M8P-6T:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-5B IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M8P-5B L:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46V64M8TG-5B:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V8M16P-6TIT:DTR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46H16M32LFCM-6 L IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFB5-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
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MT46V32M16P-6T L IT:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
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