MT9KSF51272AKIZ-1G4E1

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The MT9KSF51272AKIZ-1G4E1 is a DDR2 memory module that consists of a 4G-bit SDRAM in 8 ranks of 72-bit width. The module has a total capacity of 512Mb and is manufactured using seventy two 18Mb x8 devices, which are distributed across both sides of the DIMM. It uses a voltage of 1.8V and a clock speed of 667MHz. The MT9KSF51272AKIZ-1G4E1 features globally-shared termination, non-conductive addresses, a 240-pin gold plated connector interface, and an industry-standard, low-profile design.

The MT9KSF51272AKIZ-1G4E1 module is used in applications requiring high density memory support such as embedded systems, networking systems, servers, consumer electronics, and gaming consoles. It is designed to meet the requirements for power, performance, and space-constrained applications, and also provides a low cost, highly reliable solution. Its 8Rx8 data configuration delivers exceptionally high bandwidth and memory capacity, allowing it to handle large-scale datasets.

The MT9KSF51272AKIZ-1G4E1 uses a Load-Reduced SDRAM architecture, which improves system performance and reduces power consumption. This module also employs globally-shared termination, a 240-pin gold plated connector interface, and an industry-standard, low-profile design. This makes it suitable for a variety of applications, from consumer electronics to servers and embedded systems.

The MT9KSF51272AKIZ-1G4E1 is also equipped with non-conductive addresses, which improve the speed and accuracy of memory accesses. Its 8Rx8 data configuration helps to ensure that the module operates at its maximum speed and proficiency, and its industry-standard pin connector layout ensures compatibility with any system. The module is also RoHS compliant and is designed to operate at temperatures up to 125°C.

The working principle of the MT9KSF51272AKIZ-1G4E1 is based on DDR2 SDRAM technology. SDRAM is a high-performance memory technology that enables a system to store a large amount of data and access it quickly and reliably. It works by using a simple interface, which allows the memory controller to read and write data. The memory controller will fetch the data from the SDRAM and send it to the system, or it can store the data back to the SDRAM. The controller is programmed with a clock speed and memory address that is used to access memory. The SDRAM is organized into a grid of rows and columns, with each row and column forming a bit cell. The bit cell will store one bit of data. The speed of the SDRAM is determined by the clock speed and the time it takes for the data to move between the memory controller and the SDRAM. By increasing the clock speed, the speed of the memory can be improved.

The MT9KSF51272AKIZ-1G4E1 module is a reliable and cost-effective solution for applications that require high-density memory support. It offers excellent performance, power efficiency, and compatibility with a wide variety of systems. Its 8Rx8 data configuration and globally-shared termination helps to ensure maximum performance and reliability. It also features a non-conductive addressing system for improved speed and accuracy, and an industry-standard, low-profile design. The module is RoHS compliant and is designed to operate at temperatures up to 125°C.

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