MT9KSF51272PZ-1G6E2

Series:	--
Part Status:	Obsolete
Memory Type:	DDR3L SDRAM
Memory Size:	4GB
Speed:	1600MT/s
Package / Case:	240-RDIMM

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Memory modules are essential components of systems that help to store data and ensure seamless operation of the system. The MT9KSF51272PZ-1G6E2 is a DDR3 SDRAM module from Micron that serves this purpose. This module is capable of providing up to 64-bit operations at 1333MHz with a CAS latency of 9. It is compatible with motherboards that use Intel X79/C204/C216 chipsets. The MT9KSF51272PZ-1G6E2 has a simple yet efficient design that makes it suitable for a variety of tasks. It consists of two pieces of single-data-rate DRAM DRAM package which are installed on an 8-layer PCB printed circuit board. The board has a clamshell design which allows for better heat dissipation and easier installation. The board also features a 3-stage power delivery system which ensures efficient power management. The MT9KSF51272PZ-1G6E2 is capable of providing up to four independent channels and up to 32-bit operations at 1333MHz with a CL9 latency. It supports dual-channel DDR3 memory up to 8GB per module with a total of 16GB per system. It supports the latest Intel Core i3, i5, and i7 processor-based platforms and is optimized for a wide range of professional applications. In terms of its usage, the MT9KSF51272PZ-1G6E2 can be used in a variety of scenarios. It can be used in heavy server workloads, such as those found in a hosted video streaming services. It can also be used in virtualized environments that utilize memory-intensive applications. Additionally, it can be used to improve the performance of gaming systems that require a large amount of memory and require ultra-low latency.In terms of its working principle, the MT9KSF51272PZ-1G6E2 operates by utilizing DRAM cells that are organized into an array. Each cell consists of one transistor and two capacitors and is used to store each bit of data. The DRAM cells are organized in rows and columns and are connected to a row decoder and sense amplifier. The row decoder is used to select the correct row of cells for reading and writing data. The sense amplifier is used to sense the voltage stored in the cells. Together, these components are used to read and write data to and from the DRAM cells. The MT9KSF51272PZ-1G6E2 is also capable of utilizing error-correction codes (ECC) to detect any errors in the data that is stored in the memory. This helps to ensure that data is stored and retrieved accurately and can help to prevent system crashes. Overall, the MT9KSF51272PZ-1G6E2 is a great option for those who need a reliable and high-performance memory module for their systems. It is designed to provide fast access to stored data and can be used in a variety of scenarios. Additionally, its ECC capability helps to ensure the accuracy and reliability of data stored in the module.

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