MT9KSF51272AKZ-1G4E1

Series:	--
Part Status:	Obsolete
Memory Type:	DDR3L SDRAM
Memory Size:	4GB
Speed:	1333MT/s
Package / Case:	244-MiniUDIMM

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Memory modules are a key element in the hardware construction of computer systems. The MT9KSF51272AKZ-1G4E1 is a memory module, a flash component used in a variety of computing applications. This article will discuss the application fields and the working principle of MT9KSF51272AKZ-1G4E1.

Application Field

The MT9KSF51272AKZ-1G4E1 is a 512 megabit (Mb) memory component, commonly used as read-only memory (ROM) in devices like PC systems, consumer electronics, and automotive equipment. It is often employed in embedded system designs, which require a reliable and persistent storage architecture. By using flash memory as opposed to traditional magnetic storage solutions, memory applications can become more energy efficient and cost effective.In applications such as digital cameras, PDAs, and navigation systems, the flash memory device allows for quick data read/write speeds. This is due to the way the memory is arranged into memory cells, with each cell comprised of two transistors and a storage capacitor. In the MT9KSF51272AKZ-1G4E1 module, these memory cells are organized into array breadboards, increasing the data read/write speeds even further. Additionally, the module is capable of handling a high number of program-erase cycles.The MT9KSF51272AKZ-1G4E1 is also suitable for use in automotive applications. One such example is engine control units (ECUs), which rely on flash memory modules for their internal storage and program execution. The module is robust enough to be used within the harsh environment of a car, offering reliable program execution in spite of environmental factors such as temperature and humidity variations.

Working Principle

The MT9KSF51272AKZ-1G4E1 is an example of an electrically erasable programmable read-only memory (EEPROM). This type of flash memory is capable of storing multiple bits of information in each cell, allowing for a very large amount of data to be stored in a small space. The flash storage process works by using electrical charges to modify the electronic charge of the small memory cells, which are composed of two transistors and a storage capacitor. To write a bit of data to the cell, following a specific programming algorithm, electrical charges are applied and then later discharged from the cell, resulting in a change in charge in the memory cell and thus a programmed data bit. To erase a bit of data, an erasing algorithm would be employed, resulting in the removal of the original charge. In applications leveraging the MT9KSF51272AKZ-1G4E1, this process of storing and erasing data can be repeated many times, allowing for write and erase operations to be performed when the module is installed in the target application.

Conclusion

The MT9KSF51272AKZ-1G4E1 is a memory module, often used as ROM in a variety of computing applications. It is suitable for use in embedded systems, consumer electronics, and automotive applications such as ECUs. The module utilizes a type of flash memory called electrically erasable programmable read-only memory (EEPROM), which allows for charge modification in memory cells in order to store bits of data. This process can be repeated multiple times, offering reliable and persistent operation for a large amount of data storage within a small space.

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