Allicdata Part #: | 1125-1008-ND |
Manufacturer Part#: |
MTD5052N |
Price: | $ 5.24 |
Product Category: | Sensors, Transducers |
Manufacturer: | Marktech Optoelectronics |
Short Description: | PHOTO DIODE 525NM B/G CLR TO-18 |
More Detail: | Photodiode 525nm 24° |
DataSheet: | MTD5052N Datasheet/PDF |
Quantity: | 374 |
1 +: | $ 4.75650 |
10 +: | $ 4.30920 |
25 +: | $ 3.41158 |
100 +: | $ 2.87280 |
250 +: | $ 2.69325 |
500 +: | $ 2.46882 |
1000 +: | $ 2.33415 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Wavelength: | 525nm |
Color - Enhanced: | Blue/Green |
Spectral Range: | 410nm ~ 580nm |
Diode Type: | -- |
Responsivity @ nm: | 0.3 A/W @ 525nm |
Response Time: | -- |
Voltage - DC Reverse (Vr) (Max): | 5V |
Current - Dark (Typ): | 5pA |
Active Area: | -- |
Viewing Angle: | 24° |
Operating Temperature: | -20°C ~ 85°C |
Mounting Type: | Through Hole |
Package / Case: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optical Sensors - Photodiodes have become increasingly widespread and are used in various industries. The MTD5052N, in particular, is a high-speed analog photodiode, which is designed for low-light and medium-light current measurements.
At its core, the MTD5052N is composed of a p-type and an n-type semiconductor. Light is absorbed by the p-type semiconductor, and the electrons generated are excited by the n-type semiconductor. This process produces a current in the form of photocurrant, which is then converted to a voltage, thus producing an output signal.
The MTD5052N has several key features that differentiate it from other photodiodes on the market. First, it has a high incident power density, resulting in improved sensitivity. Also, it has a low dark current and a low thermal noise. Finally, it has a high surface areas and a high responsivity, allowing for an efficient and cost-effective solution for low-light and medium-light current measurements.
In terms of applications, the MTD5052N is suitable for a wide range of applications, including medical imaging, optoelectronic systems, and optical communications. It can be used to measure low-light and medium-light current, and its high surface area allows it to be used in systems that require high speed of data acquisition and processing.
In addition, the MTD5052N can be used in a range of industrial applications, such as laser cutting, welding, and laser marking. Its ability to measure laser beams accurately, its low dark current level, and its low thermal noise make it suitable for these types of applications.
Finally, the MTD5052N is also commonly used in astronomical and space research, as its low dark current makes it very sensitive to faint light. It can be used to detect faint stars and low light sources in space and can also be used to measure infrared radiation and ultraviolet radiation.
In terms of its working principle, the MTD5052N essentially utilizes electrical current to detect light. The p-type semiconductor absorbs light, causing it to become charged with electrons. This generates a current in the form of a photocurrent, which is then converted to a voltage, thus producing an output signal. The higher the intensity of the incident light, the greater the current produced.
Overall, the MTD5052N is a highly sensitive and efficient photodiode that can be used for a wide range of applications. Its high speed, high responsivity, and low dark current make it well-suited for applications in the medical and industrial sectors, as well as scientific research.
The specific data is subject to PDF, and the above content is for reference
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