MTD5P06VT4 Allicdata Electronics
Allicdata Part #:

MTD5P06VT4OSTR-ND

Manufacturer Part#:

MTD5P06VT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 5A DPAK
More Detail: P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface ...
DataSheet: MTD5P06VT4 datasheetMTD5P06VT4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MTD5P06VT4 belongs to the category of Transistors- FETs, MOSFETs- Single. It is a N-Channel Metal-Oxide-Semiconductor field-effect transistor (MOSFET). Generally, it is employed in automated application, power management, and high reliability applications due to its robust operating range and exceptional features.

The MTD5P06VT4 is an advanced process technology offering outstanding RDS(ON) with low gate charge and one of the best performance available in any MOSFET. The excellent performance and low profile of this device make it suitable for use in a wide variety of applications including battery powered systems, automotive electronics and industrial devices.

The working principle of MTD5P06VT4 involves the use of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor). This semiconductor device is composed of a channel of semiconductor material, a gate, a source and a drain. By applying a voltage between the source and gate, the electrical properties of the channel will alter, thereby allowing the current to flow between the source and drain. This voltage-controlled mechanism is what is responsible for the device’s control over the current flow.

In order to increase efficiency and reduce power consumption, the MTD5P06VT4 features low input voltage, low on-state resistance, low gate charge, high avalanche energy and high tightness of body drain. Comparatively, the device has higher switching frequency, excellent peak current driving capability and superior transient behavior than any other device in its category. The MTD5P06VT4 also offers superior thermal characteristics, wide common source voltage range and tight power dissipation.

The MTD5P06VT4 is mainly used in the mainstream applications in IT, industrial and power applications, such as operation and protection of motors, contactors and solenoids. It is also used in switch-mode power supplies, UPSs, automotive traction application, welding supplies, and industrial drives. Furthermore, this device also finds application in some telecommunications solutions, such as optical transceivers, line amplifiers, power adapters and PRRs.

Another application of the MTD5P06VT4 is in high reliability applications. This MOSFET has a much better RDS(ON) than any other device in its category, making it suitable for low power and moderate fluctuating loads. The device is also capable of withstanding voltage spikes that are prevalent in industrial environments. The MTD5P06VT4 can be used for various applications that require robust, reliable operation even under extreme conditions.

The MTD5P06VT4 is a versatile MOSFET device with a broad range of applications. Its high performance parameters and low profile makes it suitable for various applications, from high reliability industrial applications to mainstream IT, industrial, and power applications. The MOSFET’s working principle and features make it the perfect choice for a wide range of automated solutions.

The specific data is subject to PDF, and the above content is for reference

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