| Allicdata Part #: | MTD5P06VT4GV-ND |
| Manufacturer Part#: |
MTD5P06VT4GV |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 60V 5A DPAK |
| More Detail: | P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface ... |
| DataSheet: |  MTD5P06VT4GV Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.1W (Ta), 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The MTD5P06VT4GV is a N-Channel MOSFET device, which belongs to the vertical DMOS family.
The MTD5P06VT4GV MOSFET device is primarily used in automotive applications. It features an autonomous voltage of 60V, current-pulse ranging from 1A to 10A and an on-resistance ranging from 0.14 Ohm to 0.7 Ohm. It has a drain-source breakdown voltage of 600V, a gate threshold voltage of 2.25V and a current limit of 20A. This MOSFET is designed to operate at a temperature up to 175°C and is an excellent choice for automotive power devices.
The MOSFET has four terminals, namely the source (S), drain (D), gate (G) and body (B). The source and drain terminals are connected to the source and drain contacts respectively, while the gate and body terminals are connected to the gate and body contacts respectively. The body terminal is connected to the body contact which is a layer of insulation on the top of the MOSFET device.
The MOSFET device works in a very simple way. When the gate terminal is supplied with a positive voltage, the electrons in the gate are attracted to the positive voltage, which creates a charge and a depletion region near the drain contact. This depletion region blocks the flow of current between the source and the drain. Thus, when the gate voltage is increased, the device works in the On state and when the gate voltage is reduced it works in the Off state.
The MTD5P06VT4GV has a wide range of applications. It is used in automotive applications for controlling the flow of current and in power electronic converters for controlling the speed of motors. It is also used in switching power supplies, battery chargers, DC-DC converters, LED drivers, and other automotive and industrial applications.
In conclusion, the MTD5P06VT4GV MOSFET device is a very versatile and reliable device which can be used in a variety of automotive and industrial applications. It offers excellent performance under high temperature conditions, superior on-state resistance and high surge current capability.
The specific data is subject to PDF, and the above content is for reference
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