MTMC8E2A0LBF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	7A
Rds On (Max) @ Id, Vgs:	21 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	1450pF @ 10V
Power - Max:	1W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	WMini8-F1
Base Part Number:	MTMC8E2A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MTMC8E2A0LBF is a Field Effect Transistor (FET) array that combines 8 N-Channel Low Voltage (LV) MOSFETs into a Single monolithic structure. This type of array is the smallest and the most advanced technology for high frequency power amplification applications. This is an important part of today\'s electronic power control circuits in products such as wall chargers, power amplifiers, instrumentation, and power meters. It is also used in high frequency radio transmitters and receivers, power amplifiers, low voltage switching power supplies and wireless DC/DC converters.The N-Channel MOSFETs of the MTMC8E2A0LBF are designed to provide high switching speed, high efficiency, low operating voltage and excellent thermal stability. The FET array has a very low on-resistance with very small switching losses, making it suitable for high frequency switching applications. The MTMC8E2A0LBF has several unique features that make it attractive for power control and switching applications. It is a monolithic integrated circuit (IC) that has one output terminal and four gate control terminals. It is also an integrated circuit with two gate-drive circuits built-in, making it faster and more efficient than other FETs. The MTMC8E2A0LBF has a very low gate threshold voltage, making it suitable for low voltage applications. It can be operated with a 3.0V or lower gate drive voltage, allowing it to be used in low voltage control circuits. It also has a low gate capacitance and a very low on-resistance. This combination ensures excellent switching speed and low power losses under a variety of operation conditions. In addition, the FET array has an extremely low junction-to-source capacitance, which allows it to operate at high frequencies with very low noise and distortion levels. The integrated circuits also have an on-chip ESD protection diode and several typical ESD current ratings depending on the power package type. The MTMC8E2A0LBF is also used for high frequency power amplification applications. Its very low on-resistance and its correspondence to other devices, like Low Noise Amplifiers (LNAs), make it suitable for high frequency power amplification applications. It is also well-suited for switching power supplies, DC/DC converters, instrumentation, and other high frequency applications requiring low power consumption, low distortion, and high dynamics. In some applications, the MTMC8E2A0LBF also has very low junction-to-source capacitance which makes it suitable for high frequency and radio frequency (RF) applications.The MTMC8E2A0LBF is available in both surface mount and through hole Power packages. It is an RoHS compliant product and is available from many different distributors around the world.The MTMC8E2A0LBF is a great option for high frequency power control and switching applications. Its unique features like low on-resistance, high switching speed, low operating voltage and small form factor make it very attractive for various electronic components and instruments. Its availability in both surface mount and through hole Power packages also makes it easy to integrate into various electronic products.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description