MTZJ20SD R0G Allicdata Electronics
Allicdata Part #:

MTZJ20SDR0G-ND

Manufacturer Part#:

MTZJ20SD R0G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 20.22V 500MW DO34
More Detail: Zener Diode 20.22V 500mW ±2% Through Hole DO-34
DataSheet: MTZJ20SD R0G datasheetMTZJ20SD R0G Datasheet/PDF
Quantity: 1000
20000 +: $ 0.01720
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 20.22V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 55 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Description

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MTZJ20SD R0G is a single type of Zener diode. Its application field and working principle may be determined according to its characteristics and internal structure.

Characteristics: MTZJ20SD R0G has a voltage range of 2 V to 20 V, and its maximum current capability is 2 A. It also has a high surge current capability, with a maximum repetitive reverse peak current rating of 50 A. This diode also has a low zener voltage temperature coefficient at -5 mV/°C. Finally, the maximum power dissipation of this diode is 1.0 W.

Internal Structure: The internal structure of the MTZJ20SD R0G consists of an an anodic substrate, a reverse biased junction, two ZnSe-type Zener diodes, and a gold finger. The anodic substrate is the base of the diode, where the rest of the components connect. The reverse biased junction is connected to the anode and the cathode, and is responsible for creating the electrical field that produces the desired zener effect. The two ZnSe-type Zener diodes act as a protection element, and they absorb any electric current that attempts to flow in the opposite direction. Finally, the gold finger serves as the electrical connection point between the other elements and the case of the diode.

Application Field: The application field of the MTZJ20SD R0G is broad. This diode can be used for voltage regulation, noise suppression, and protection from electric current surges. It is also suitable for use in applications where high power dissipations are required. The MTZJ20SD R0G is especially useful in automotive applications, since it is capable of withstanding very high temperatures and has a low temperature coefficient.

Working Principle: The working principle of the MTZJ20SD R0G is based on the Zener effect created in a reverse biased p-n junction. When the diode is forward biased, it allows an electric current to flow freely. As the voltage across this diode increases, a reverse biased field is created, and it creates an internal electric field that opposes the forward biasing. This electric field can be adjusted using the Zener voltage control and the Zener voltage temperature coefficient. This diode can be used to regulate voltages and suppress noise that is created by electric current.

In conclusion, the MTZJ20SD R0G is a single type of Zener diode, which has a wide range of applications. It has a voltage range of 2 V to 20 V, a current capability of up to 2 A, and a maximum power dissipation of 1.0 W. Its internal components include an anodic substrate, a reverse biased junction, two ZnSe-type Zener Diodes, and a gold finger. The Zener effect that is created in this diode can be used for voltage regulation, noise suppression, and protection from electric current surges.

The specific data is subject to PDF, and the above content is for reference

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