MTZJ16SA R0G Allicdata Electronics
Allicdata Part #:

MTZJ16SAR0G-ND

Manufacturer Part#:

MTZJ16SA R0G

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 15.19V 500MW DO34
More Detail: Zener Diode 15.19V 500mW ±2% Through Hole DO-34
DataSheet: MTZJ16SA R0G datasheetMTZJ16SA R0G Datasheet/PDF
Quantity: 1000
20000 +: $ 0.01720
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 15.19V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 12V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Description

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The MTZJ16SA R0G diode is a single, zener diode used in various applications and electronic circuits depending on the working principle. It is mainly used in different kinds of power supplies, such as converters, regulators, and chargers. It is also ideal for use in AC to DC rectification and provides superior noise-immune operation.

The diode is offered in two different options, a general type and an ultra-low leakage type. Both of these options employ different technologies to provide efficient and reliable operation. In the general type, the diode comprises an N-type substrate layer with a planar P-type layer formed on top. In the ultra-low leakage type, the substrate is P-type and the planar layer is N-type and thereby offering superior reversibility and low-leakage characteristics.

The MTZJ16SA R0G diode is mainly used in compact power supply design and power supply system solutions. These devices provide superior reliability and utilization of the space, which is essential when creating complex designs. The diode also features high-peak current capability, low leakage current, outstanding thermal and electrical performance, and excellent reliability.

The MTZJ16SA R0G working principle revolves around the PN junction formation. When a voltage higher than the breakdown voltage of the PN junction is applied, current starts flowing in the reverse direction. This process is known as reverse breakdown, and it enables the diode to conduct current in both the forward and reverse directions.

The breakdown voltage of the PN junction is determined by the doping level of either the N or P layer of the diode. In the MTZJ16SA R0G, the breakdown voltage is set at 16 volts. This allows the device to regulate the current and thereby provide the required power for a particular application.

The MTZJ16SA R0G device is a robust component that offers a variety of advantages such as low on resistance and excellent heat dissipation. These features make it an ideal solution for precision current control, voltage stability, and over voltage protection. In short, it can be used in various types of electronic applications requiring precise voltage control.

The MTZJ16SA R0G diode is a single, zener diode which has various applications depending on its working principle. It is mainly used in power supplies, such as converters, chargers, and rectifiers and the general type offers efficient and reliable operation. The diode features a breakdown voltage of 16 volts and offers excellent thermal, electrical, and operational characteristics for efficient and reliable operation.

In summary, the MTZJ16SA R0G diode is an ideal component for precision current control, voltage stability, and over voltage protection in numerous types of applications. It has a breakdown voltage of 16 volts and offers excellent thermals, electricals, and operational characteristics that offer efficient and reliable operation in different power supplies like rectifiers and converters.

The specific data is subject to PDF, and the above content is for reference

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