MTZJT-7724C Allicdata Electronics
Allicdata Part #:

MTZJT-7724C-ND

Manufacturer Part#:

MTZJT-7724C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 24V 500MW MSD
More Detail: Zener Diode 24V 500mW ±3% Through Hole MSD
DataSheet: MTZJT-7724C datasheetMTZJT-7724C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 24V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 19V
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD
Description

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MTZJT-7724C is a single Zener diode. It features a breakdown voltage of 24 volts and a low maximum reverse current of 5 milliamps. The diode has a power dissipation rating of 200 mW and is made of glass-encased in epoxy. The device is capable of carrying a maximum digital voltage of 2.5V and has a zener impedance between 4 and 5 ohms.

MTZJT-7724C application fields mainly include voltage regulation and EMI suppression. Voltage regulation is an important function of this device and can be achieved by connecting it in parallel with the load. When the load voltage exceeds the diode’s breakdown voltage of 24V, the diode will start to conduct current and the voltage will be regulated at the diode breakdown voltage. It is also used for EMI suppression, which involves connecting it across high-frequency signals. It will absorb the signal pulses and limit the signal distortion, thus ensuring good signal integrity.

The working principle of MTZJT-7724C is as follows. When a forward voltage is applied across the diode, the diode will switch on and start to conduct current. The electrical current flow is based on the following two equations: V = - IR and P = I^2R, where P is power, I is current and V is voltage.

When the diode is in forward bias conduction, the current is mainly carried by majority carriers (holes and electrons). These carriers move through the diode in opposite directions. Majority carriers have discrete energy levels and at certain voltages, electrons and holes can recombine to create a small current-less region. This region is known as a depletion region and acts as an insulator, blocking further flow of current. This blocking prevents the device from conducting high amounts of current and prevents voltage spikes from occurring.

When the reverse bias voltage exceeds the Zener breakdown voltage of MTZJT-7724C, the device starts to conduct current in the reverse direction. This is the concept of Zener diode reverse breakdown and allows the device to be used as a voltage regulator. The diode is also used in EMI suppression since it limits the high-frequency signal pulses and maintains signal integrity.

In conclusion, MTZJT-7724C is a single Zener diode offering voltage regulation and EMI suppression. The device has a breakdown voltage of 24 volts and a power dissipation rating of 200 mW. It is generally used in forward bias conduction, where majority carriers move through the diode, controlling the current flow. When the reverse bias voltage exceeds the breakdown threshold, the device behaves as a voltage regulator and also it is used for EMI suppression.

The specific data is subject to PDF, and the above content is for reference

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