MUR1100-TP Discrete Semiconductor Products |
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Allicdata Part #: | MUR1100-TPMSTR-ND |
Manufacturer Part#: |
MUR1100-TP |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 1KV 1A DO41 |
More Detail: | Diode Standard 1000V 1A Through Hole DO-41 |
DataSheet: | MUR1100-TP Datasheet/PDF |
Quantity: | 10000 |
5000 +: | $ 0.04525 |
10000 +: | $ 0.04022 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.75V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MUR1100 |
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The MUR1100-TP is a type of fast recovery rectifying diode (FRD) commonly used when extremely low forward-voltage drop and low leakage current are essential. As a single-phase silicon rectifier, the MUR1100-TP is capable of carrying up to 1,000 volts with a reverse current of up to 110 Amps. The device is available with bi-directional and unidirectional mounting options, making it suitable for a wide range of applications.
Applications of the MUR1100-TP
The MUR1100-TP rectifier is suitable for use in a variety of applications, including:
- Portable power supplies
- Uninterruptible power supplies
- Inverters
- Power conversions
- Motor drives
The MUR1100-TP also provides reliability and performance in many other applications, such as:
- Electric vehicles
- Cellular phones
- Remote control systems
- Telecommunications
- Battery chargers
In addition to its various applications, the device\'s great forward-voltage drop characteristics and low leakage current make it suitable for medical devices, industrial applications, and power supplies.
Working Principle of the MUR1100-TP
The MUR1100-TP is a type of rectifier diode characterized by its fast recovery time. When the device is conducting current, no charge carriers remain inside the junction, making it an ideal choice for applications that require rapid switching. The device\'s ultra-fast recovery time ensures that there is virtually no voltage sag when its current is rapidly switched.
When the device is set in its forward bias, the N-type base carries majority charge carriers, while the P-type base carries minority charge carriers. This creates a strong potential difference across the junction, allowing for current to pass through. When the device is in its reverse-bias state, there is a much higher potential barrier across the junction, making it difficult for charge current to pass.
Typically, the MUR1100-TP is used as a single-phase rectifier, using a bridge circuit to convert an AC voltage into a DC voltage. The bridge circuit uses four or more diodes to create a closed path for the current to flow in when the diodes are in their forward-bias state. In this way, the alternating forward and reverse voltage of the AC voltage is rectified and the resulting DC voltage can be used in a variety of power applications.
Conclusion
The MUR1100-TP is a fast recovery rectifier diode that is capable of carrying high currents and providing low forward-voltage drop at high operating speeds. The device is suitable for many applications, including power supplies, inverters, and battery chargers. It is also used in industrial applications and medical devices, due to its low leakage current and fast recovery time. The MUR1100-TP is typically used in a single-phase rectifier circuit, where it converts the AC voltage into a DC voltage capable of powering circuits.
The specific data is subject to PDF, and the above content is for reference
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MUR160S R5G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 1A DO... |
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