Allicdata Part #: | MUR120SM4G-ND |
Manufacturer Part#: |
MUR120S M4G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO214AA |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AA (SMB... |
DataSheet: | MUR120S M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.05702 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 875mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 50µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The MUR120S M4G is a single rectifier diode designed for use in general-purpose switching and rectification applications. Its low thermal resistance and high peak current capabilities make it suitable for use in current control circuits and pulsed or power applications, such as power supplies and battery chargers.
The MUR120S M4G is constructed with two p-type layers of silicon, each separated from the other by a thin film of n-type material. The first layer (the anode) is connected to the positive voltage source, while the second layer (the cathode) is connected to the negative voltage source. This structure offers some advantages over other types of diodes, such as the ability to withstand higher reverse voltages. Thus, it can be used in circuits requiring high voltage protection.
The MUR120S M4G also incorporates an ultra-low turn-on voltage, making it ideal for use in PWM (pulse width modulated) circuits. In a PWM circuit, the MUR120S M4G is capable of providing a fast, responsive on/off switching while minimizing the loss of energy due to the effects of thermal runaway. PWM circuits are often used in applications like motor drivers, DC to DC converters, and other high power switching circuits.
The MUR120S M4G also has a high junction temperature rating, making it suitable for use in high temperature applications. Moreover, due to its high surge capability, it can be used in circuits that are prone to large surges, such as automotive applications.
The working principle of the MUR120S M4G is simple. When a forward voltage is applied, electrons flow from the anode to the cathode and the diode conducts current. However, when the reverse voltage is applied, the electrons can no longer flow and the diode blocks the current. The amount of current that can be conducted is determined by the forward voltage applied to the diode.
This single rectifier diode can find usage in a variety of applications, such as power supplies, inverters, rectifiers, motor speed control, photovoltaic systems, and DC to DC converters. Thanks to its high peak current ratings, it is a popular choice for use in high power switching applications, such as automotive, industrial, and military applications.
In conclusion, the MUR120S M4G is a single rectifier diode designed for general-purpose switching and rectification applications. Its low thermal resistance and high peak current ratings make it suitable for use in high power applications and circuits that are prone to surges. Thanks to its low turn-on voltage, it can also be used in PWM circuits. Overall, it is an excellent choice for a wide variety of power management applications.
The specific data is subject to PDF, and the above content is for reference
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