MUR1520G Allicdata Electronics
Allicdata Part #:

MUR1520GOS-ND

Manufacturer Part#:

MUR1520G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 200V 15A TO220-2
More Detail: Diode Standard 200V 15A Through Hole TO-220-2
DataSheet: MUR1520G datasheetMUR1520G Datasheet/PDF
Quantity: 4680
Stock 4680Can Ship Immediately
Specifications
Series: SWITCHMODE™
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MUR1520
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUR1520G is a selectable common-cathode ultrafast rectifier diode with a maximum reverse voltage rating of 600 volts, which finds applications in equipment used for power supplies and motor control. It is built on a non-ceramic substrate with silicon oxidation dielectric layers and has a doping rate of 1016 to 1017 per cubic centimeter. The MUR1520G is a high-voltage, high-power single-phase rectifier diode, with reverse voltage protection and forward voltage drop of 1.2 to 1.8 volts. The device also offers high di/dt capability and reverse avalanche performance, due to its PNP epitaxial construction and its heavy doping rate. The design of the MUR1520G follows the classic rectifier diode construction with its single P-type layer at the top and its N-type layer at the bottom acting as the cathode. Energy passes through the interconnected layers, from the anode to the cathode, ultimately being utilized by the application. Because the device is constructed on a non-ceramic substrate with its layers intrinsically linked together, it is able to convert energy from both direct current (DC) and alternating current (AC) sources. The working principle behind the MUR1520G\'s operation is based upon the junction formed by the positive and negative regions of the structure. When the device is properly biased, current can flow from the anode to the cathode, allowing electrical energy to be converted from one form to another. The voltage breakdown of the diode is determined by the doping rate of the layers, with the higher rate providing higher breakdown voltages. The MUR1520G is ideal for applications requiring a high power rectifier with a 600 V maximum reverse voltage, such as motor controls and power supplies. The device\'s construction of a non-ceramic substrate with silicon oxidation dielectric layers enables high di/dt performance and reverse avalanche immunity, while its PNP epitaxial construction provides efficient energy conversion. With its wide range of rated currents and voltages, the MUR1520G can provide a reliable solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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