MUR190AHA0G Allicdata Electronics
Allicdata Part #:

MUR190AHA0G-ND

Manufacturer Part#:

MUR190AHA0G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 900V 1A DO204AL
More Detail: Diode Standard 900V 1A Through Hole DO-204AL (DO-4...
DataSheet: MUR190AHA0G datasheetMUR190AHA0G Datasheet/PDF
Quantity: 1000
12000 +: $ 0.06983
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 900V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The MUR190AHA0G is a single, ultra-fast recovery rectifier diode produced by semiconductor manufacturer ON Semiconductor (formerly known as Motorola Semiconductor). With its low forward voltage drop, ultra-fast recovery time, and high peak reverse blocking voltages, it is an ideal diode to be used in moderate frequency, power, and high-voltage applications. With its ultra-low reverse leakage current and low capacitance, the MUR190AHA0G is also suitable for a wide range of industrial, commercial, and automotive applications.The MUR190AHA0G is housed in a low-profile, surface-mount DO-4 (D-4) package, making it suitable for use in surface-mount applications. It complies with the RoHS (Restriction of Hazardous Substances) directive and features a guaranteed breakdown voltage of 170 V. Its maximum continuous forward operating current of 3 A, maximum average forward power dissipation of 40 W, and low forward voltage drop when in forward conduction were designed to handle moderate frequency, power, and high voltage applications, making it the ideal diode for use in such applications.The MUR190AHA0G is a single, ultra-fast recovery rectifier diode intended for use in a wide range of power, high voltage applications. Its primary function is to stop the reverse flow of current through the diode when an electric device is shut off. This is accomplished by the rectifier diode\'s ability to switch between a conducting and non-conducting state. When in the non-conducting state, the reverse current flow is cut off, preventing further damage to the device.The diodes’s fast switching speed is a result of its ultra-fast recovery time, which allows it to switch quickly between conducting and non-conducting states. Additionally, the diode’s high peak reverse blocking voltage ensures that the electric device is sufficiently protected from significant voltage-related damage. The MUR190AHA0G’s reverse leakage current is also very low, allowing the diode to protect the device with minimal current flow. The MUR190AHA0G’s low capacitance means that the device will not be affected by momentary voltages or currents that may cause it to switch at an unexpected time. This helps to ensure that the device will operate reliably and efficiently. Additionally, it helps to increase the diode’s life span.The wide range of industrial, commercial, and automotive applications for the MUR190AHA0G can be attributed to its compact, low profile surface-mount design, its RoHS compliance, and its wide range of features designed for use in power and high-voltage applications. With its large forward current, power dissipation, and low forward voltage drop capabilities, the MUR190AHA0G is an ideal diode for use in a wide range of industrial and commercial applications.In conclusion, the MUR190AHA0G is a single, ultra-fast recovery rectifier diode available in a low-profile, surface-mount DO-4 package. It is an ideal diode for use in a wide range of industrial, commercial, and automotive applications due to its RoHS compliance, high peak reverse blocking voltages, low forward voltage drop, low reverse leakage current, low capacitance, and large forward current and power dissipation capabilities. Its features make it the perfect diode for use in a variety of power and high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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