MUR410 Allicdata Electronics
Allicdata Part #:

MUR410-ND

Manufacturer Part#:

MUR410

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 100V 4A DO201AD
More Detail: Diode Standard 100V 4A Through Hole DO-201AD
DataSheet: MUR410 datasheetMUR410 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: SWITCHMODE™
Packaging: Bulk 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MUR410
Description

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MUR410 Application Field and Working Principle

The MUR410 is classified as a single rectifier diode, which is a semiconductor device with a P and N junction that helps conduct electric current in only one direction, and blocks it in the opposite direction. This diode has many applications in various fields, and can be used for a variety of design and power supply applications.

Application Field: The MUR410 is a popular choice for n-channel junction applications such as Schottky barrier rectifiers, rectified switch-mode power supplies, free-wheeling diodes and low voltage rectifiers. This diode can also be used for circuit protection and as a switching element in amplified circuits. Furthermore, it is designed to handle reverse voltage of around 400 V and can pass currents up to 15A.

Working Principle: The MUR410 is a rectifier diode that allows current to flow in only one direction. It is usually placed in the circuit in such a way that the current flows from the cathode (+) to the anode (-). The internal structure of the diode is designed in such a way that the positively charged P-type semiconductor is connected to the cathode, while the negatively charged N-type semiconductor is connected to the anode. The diode also has a small barrier layer at the junction of the two semiconductors. This barrier layer prevents current from passing in either direction. However, when a voltage is applied across the diode, the barrier layer breaks down and current starts flowing through the diode in only one direction.

When the voltage exceeds the barrier voltage, the electric field in the P-N junction gets stronger and starts breaking the covalent bonds in the P-N junction. It also ‘de- Traps’ the minority carriers that were trapped at the junction. The current then starts to flow from the N-type region to the P-type region. As the voltage is increased further, the current continues to increase, and the diode is said to have entered a state of forward bias. In this state, the diode allows current to flow in one direction only.

When the reverse voltage is applied to the diode, the electric field reverses and the current stops flowing. This is due to the fact that the diode\'s voltage rating is equal to its reverse voltage rating. In this state, the diode acts as an insulator and does not allow any current to flow.

In summary, the MUR410 diode is used in various applications and is capable of handling high reverse voltages up to 400V. It works on the principle of forward bias, where it allows the current to flow in only one direction. This semiconductor device is an important component in many electronic devices and circuits.

The specific data is subject to PDF, and the above content is for reference

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