Allicdata Part #: | MUR460SR7GTR-ND |
Manufacturer Part#: |
MUR460S R7G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 4A DO214AB |
More Detail: | Diode Standard 600V 4A Surface Mount DO-214AB (SMC... |
DataSheet: | MUR460S R7G Datasheet/PDF |
Quantity: | 850 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The MUR460S R7G is a high-efficiency, miniature, triple-diffused, diffused planar type, surface-mount rectifier. It provides fast switching, low forward voltage drop, and excellent noise immunity, making it ideal for various comprehensive electronic equipment applications. This rectifier is suitable for commercial and automotive applications, vehicle and engine controls, generators, and other power electronics.
The MUR460S R7G rectifier operates in four modes depending on the polarity of the voltage applied to the anode and cathode terminals. In the forward bias direction, the diode allows current to flow through the device, while in the reverse bias direction, the diode acts as an open circuit. The diode is also capable of operating in an AC state, allowing for AC voltage to be applied to the anode and cathode terminals. The diode can also be operated in a capacitive mode, allowing current to flow through the device despite an absence of a reverse bias voltage.
The MUR460S R7G rectifier is constructed from a planar, diffused epitaxial layer silicon semiconductor. The anode is connected directly to the epi layer and is the larger of the two terminals. The cathode is connected to the epi layer via a small resistor, which reduces voltage overshoot and improves the area around the cathode. The small resistor also aids in the elimination of direct metallic contact between the anode and cathode to improve noise suppression. The device is extremely low-profile, measuring only 0.6mm x 0.8mm.
The MUR460S R7G rectifiers provide excellent thermal characteristics, with a rated operating temperature range of -55°C to150°C. This wide range of operation is perfect for a wide variety of applications. The device also has a very low forward voltage drop of 0.8V to 0.9V, allowing for energy savings and increased efficiency. And with a maximum reverse current rating of 1μA, the device can handle a wide range of power levels.
The MUR460S R7G rectifier is made of the highest quality materials and is designed to provide the highest level of performance. The device is RoHS-compliant, and its conductive plastic is UL-recognized, making it a great choice for a wide range of applications. The device itself is also highly reliable, with a mean time between failure of 10,000 to 20,000 hrs. This means that the device can provide years of reliable performance for a wide variety of applications.
The MUR460S R7G rectifier is an ideal choice for many power electronic applications, from commercial to automotive applications, vehicle and engine controls, generators, and other power electronics. The device provides fast switching, low forward voltage drop, and excellent noise immunity, making it perfectly suited for a wide range of power applications.
The specific data is subject to PDF, and the above content is for reference
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MUR415G | ON Semicondu... | 0.34 $ | 445 | DIODE GEN PURP 150V 4A AX... |
MUR460S R7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420 A0G | Taiwan Semic... | 0.22 $ | 500 | DIODE GEN PURP 200V 4A DO... |
MUR420-E3/54 | Vishay Semic... | -- | 4200 | DIODE GEN PURP 200V 4A DO... |
MUR480ERLG | ON Semicondu... | 0.18 $ | 1500 | DIODE GEN PURP 800V 4A AX... |
MUR480EG | ON Semicondu... | 0.46 $ | 2601 | DIODE GEN PURP 800V 4A AX... |
MUR415RLG | ON Semicondu... | 0.13 $ | 1500 | DIODE GEN PURP 150V 4A AX... |
MUR420-TP | Micro Commer... | 0.18 $ | 9600 | DIODE GEN PURP 200V 4A DO... |
MUR460-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR460SHR7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 600V 4A DO... |
MUR480-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 4A DO... |
MUR420S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR440S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR440S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR420S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR460S V7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420RLG | ON Semicondu... | 0.13 $ | 39000 | DIODE GEN PURP 200V 4A DO... |
MUR460RLG | ON Semicondu... | -- | 30000 | DIODE GEN PURP 600V 4A DO... |
MUR4100ERLG | ON Semicondu... | 0.2 $ | 9000 | DIODE GEN PURP 1KV 4A DO2... |
MUR440-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR460-M3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR440-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR460-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR420-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR420-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
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MUR4L40 A0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
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MUR420 R0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR440 R0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
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