Allicdata Part #: | MUR480ESG-ND |
Manufacturer Part#: |
MUR480ESG |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 800V 4A DO201AD |
More Detail: | Diode Standard 800V 4A Through Hole DO-201AD |
DataSheet: | MUR480ESG Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 0.47250 |
10 +: | $ 0.41454 |
100 +: | $ 0.31796 |
500 +: | $ 0.25137 |
1000 +: | $ 0.20110 |
Series: | SWITCHMODE™ |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.85V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 100ns |
Current - Reverse Leakage @ Vr: | 25µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | MUR480 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MUR480ESG is a high power, high voltage, shielded ultrafast rectifier which is specifically designed to be used in aerospace, industrial, or commercial applications. The MUR480ESG is a single diode which is composed of a cathode, an anode and a terminal. It is designed to be used in high voltage and power applications. Its maximum peak repetitive voltage is 6800V and its maximum average output current is 8A. The MUR480ESG has a low forward voltage drop, which makes it suitable for operating in high-frequency applications. It also has a shielded construction which makes it suitable for operation in an environment filled with electromagnetic radiation.
The working principle of MUR480ESG is based on a PN junction diode. A semiconductor PN junction is formed by the arrangement of an anode, a cathode and a terminal. A PN junction diode allows current to flow in one direction only and restricts current from flowing in the opposite direction. When the anode is positive with respect to the cathode, current cannot flow through the diode. When the anode is negative with respect to the cathode, current can flow through the diode, but in this state the voltage drop through the diode is low. The MUR480ESG is designed to work in this fashion in order to achieve a low forward voltage drop.
The MUR480ESG is specifically designed to work in high-frequency applications; it has a shielded construction which makes it suitable for operation in an environment filled with electromagnetic radiation. The shielding prevents high-frequency interference from escaping outside of the diode and impacting other components. The shielding also prevents any external interference from entering the diode and affecting its operation. Additionally, the shield prevents dielectric losses in the diode’s semiconductor material, which helps to improve the diode’s efficiency and power handling capability. Furthermore, the shielding increases the diode’s reverse leakage current which further contributes to the diode’s efficiency.
The MUR480ESG is an ideal choice for a variety of high voltage and power applications, such as motor drives and electric motor control systems. The device’s shielded construction and low forward voltage drop make it an ideal choice for high-frequency applications, as well as applications which require a large amount of power. The device’s ability to handle high voltage, and its ability to handle a large amount of current, make it an excellent choice for use in applications which require both. Furthermore, the device’s shielded construction and low forward voltage drop make it an ideal choice for applications which require the use of multiple diodes, such as bridge rectifier circuits.
The MUR480ESG is a reliable and efficient device which can be used in a variety of high voltage and power applications, such as motor drives and electric motor control systems. The device’s shielded construction and low forward voltage drop make it an ideal choice for high-frequency applications, as well as applications which require a large amount of power. Additionally, the device’s ability to handle high voltage, and its ability to handle a large amount of current, make it an excellent choice for use in applications which require both. Finally, the device’s shielded construction and low forward voltage drop make it an ideal choice for applications which require the use of multiple diodes, such as bridge rectifier circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MUR410RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 4A DO... |
MUR440RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 4A AX... |
MUR420-E3/73 | Vishay Semic... | 0.18 $ | 2000 | DIODE GEN PURP 200V 4A DO... |
MUR460 A0G | Taiwan Semic... | 0.23 $ | 1500 | DIODE GEN PURP 600V 4A DO... |
MUR410G | ON Semicondu... | 0.33 $ | 4877 | DIODE GEN PURP 100V 4A DO... |
MUR420G | ON Semicondu... | 0.34 $ | 3267 | DIODE GEN PURP 200V 4A DO... |
MUR405G | ON Semicondu... | -- | 1585 | DIODE GEN PURP 50V 4A DO2... |
MUR440G | ON Semicondu... | -- | 1669 | DIODE GEN PURP 400V 4A AX... |
MUR460G | ON Semicondu... | 0.39 $ | 6547 | DIODE GEN PURP 600V 4A DO... |
MUR4100EG | ON Semicondu... | -- | 2054 | DIODE GEN PURP 1KV 4A DO2... |
MUR415G | ON Semicondu... | 0.34 $ | 445 | DIODE GEN PURP 150V 4A AX... |
MUR460S R7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420 A0G | Taiwan Semic... | 0.22 $ | 500 | DIODE GEN PURP 200V 4A DO... |
MUR420-E3/54 | Vishay Semic... | -- | 4200 | DIODE GEN PURP 200V 4A DO... |
MUR480ERLG | ON Semicondu... | 0.18 $ | 1500 | DIODE GEN PURP 800V 4A AX... |
MUR480EG | ON Semicondu... | 0.46 $ | 2601 | DIODE GEN PURP 800V 4A AX... |
MUR415RLG | ON Semicondu... | 0.13 $ | 1500 | DIODE GEN PURP 150V 4A AX... |
MUR420-TP | Micro Commer... | 0.18 $ | 9600 | DIODE GEN PURP 200V 4A DO... |
MUR460-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR460SHR7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 600V 4A DO... |
MUR480-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 4A DO... |
MUR420S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR440S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR440S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR420S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR460S V7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420RLG | ON Semicondu... | 0.13 $ | 39000 | DIODE GEN PURP 200V 4A DO... |
MUR460RLG | ON Semicondu... | -- | 30000 | DIODE GEN PURP 600V 4A DO... |
MUR4100ERLG | ON Semicondu... | 0.2 $ | 9000 | DIODE GEN PURP 1KV 4A DO2... |
MUR440-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR460-M3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR440-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR460-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR420-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR420-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR4L20 A0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR4L40 A0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR4L60 A0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR420 R0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR440 R0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
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