Allicdata Part #: | MUR4L60HR0G-ND |
Manufacturer Part#: |
MUR4L60HR0G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 4A DO201AD |
More Detail: | Diode Standard 600V 4A Through Hole DO-201AD |
DataSheet: | MUR4L60HR0G Datasheet/PDF |
Quantity: | 1000 |
3750 +: | $ 0.17399 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.28V @ 4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 175°C |
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。Diodes are important components in electronic circuits. The the most commonly used diode is the "Single" diode, due to its relatively simple structure and reliable performance. Among them, the MUR4L60HR0G is a kind of single diode which is widely used due to its great applicability and excellent performance in a range of applications.
The MUR4L60HR0G belongs to the Metal-Oxide-Semiconductor Diode, which is a rectifier diode capable of passing current in one direction while blocking current in the opposite direction. Its electrical characteristics include its forward voltage drop, maximum rated current, reverse voltage, reverse current leakage and recovery time. With the BCR (Breakdown Current Ratio) at 0.8, the MUR4L60HR0G can handle up to 4A in current, and has a maximum operating temperature of 175C.
In terms of its applications, the MUR4L60HR0G rectifier diode is used in audio amplifiers, medical equipment, power switching circuits, home appliance circuits and more. Its fast forward and reverse recovery times make it suitable for handling high frequency signals such as those found in telecommunications. It is also widely utilized for voltage step-up and step-down operations, for example in the design of power conversion circuits.
The working principle of MUR4L60HR0G is largely based on the physics of PN junctions. When a PN junction is forward biased, the current flows from the P-type material to the N-type material. This means that the diode will “let through” current in the ‘forward’ direction, but will block current in the opposite direction.
The MUR4L60HR0G rectifier diode is able to block current in one direction while allowing current to pass through in the other direction due to its PN junction design. This makes it suitable for applications such as voltage step-up and step-down, and audio amplifiers. Its fast forward and reverse recovery times, coupled with its high current handling capability, make it a popular and reliable semiconductor component in a range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MUR460S R7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420 A0G | Taiwan Semic... | 0.22 $ | 500 | DIODE GEN PURP 200V 4A DO... |
MUR420-E3/54 | Vishay Semic... | -- | 4200 | DIODE GEN PURP 200V 4A DO... |
MUR480ERLG | ON Semicondu... | 0.18 $ | 1500 | DIODE GEN PURP 800V 4A AX... |
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MUR460-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR460SHR7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 600V 4A DO... |
MUR480-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 4A DO... |
MUR420S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR440S R7G | Taiwan Semic... | 0.16 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR440S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 400V 4A DO... |
MUR420S V7G | Taiwan Semic... | 0.14 $ | 850 | DIODE GEN PURP 200V 4A DO... |
MUR460S V7G | Taiwan Semic... | -- | 850 | DIODE GEN PURP 600V 4A DO... |
MUR420RLG | ON Semicondu... | 0.13 $ | 39000 | DIODE GEN PURP 200V 4A DO... |
MUR460RLG | ON Semicondu... | -- | 30000 | DIODE GEN PURP 600V 4A DO... |
MUR4100ERLG | ON Semicondu... | 0.2 $ | 9000 | DIODE GEN PURP 1KV 4A DO2... |
MUR440-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
MUR460-M3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 4A DO... |
MUR440-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 4A DO... |
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MUR420-M3/73 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
MUR420-M3/54 | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
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MUR420 R0G | Taiwan Semic... | 0.17 $ | 1000 | DIODE GEN PURP 200V 4A DO... |
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