Allicdata Part #: | MURF10020GN-ND |
Manufacturer Part#: |
MURF10020 |
Price: | $ 39.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE MODULE 200V 100A TO244 |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 10... |
DataSheet: | MURF10020 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 35.62570 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 50A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 25µA @ 50V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | TO-244AB |
Supplier Device Package: | TO-244 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MURF10020 is a high current device in the Diodes - Rectifiers - Arrays family. It is designed for use in a variety of high frequency, high-current devices, such as switching power supplies, automotive applications, modems, and cellular phones. It is widely used for DC/DC conversion, AC-DC rectification, EMI filter circuits, motor drive, and electronic ballast.
The MURF10020 integrates two or more P-type MOSFETs into a single device, providing high current capability and low power consumption. This device is available in both TO-223 and TO-220 packages, and features a maximum current rating of up to 20 A, a maximum voltage rating of up to 60 V, and a maximum temperature rating of up to 125°C. The MURF10020 also provides excellent thermal performance and low voltage drop by incorporating high-speed trench gate technology.
The working principle of the MURF10020 is based on a two independent MOSFETs structure. Each MOSFET in the device is able to provide significant current without a significant increase in power dissipation. Upon the device being connected to an external power source, the MOSFETs will be triggered and will start conducting current from the external power source to the load. The current that flows through the device is determined by the voltage applied on the device and the gate-source voltage of the MOSFETs. This ensures that the device can be used to supply a wide range of current requirement without any significant changes in the power dissipation.
The MURF10020 is a great device to consider when designing high-current loads, such as high-power switching supplies and automotive applications. Its low power consumption and high-current capability set it apart from other rectifier devices on the market, making it a popular choice for designers. Its integration of two or more P-type MOSFETs also makes it an attractive option for building reliable circuits with minimal power dissipation.
The specific data is subject to PDF, and the above content is for reference
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