Allicdata Part #: | MURF10040GN-ND |
Manufacturer Part#: |
MURF10040 |
Price: | $ 39.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE MODULE 400V 100A TO244AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 400V 10... |
DataSheet: | MURF10040 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 35.62570 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io) (per Diode): | 100A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 50A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 25µA @ 50V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | TO-244AB |
Supplier Device Package: | TO-244AB |
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Diodes - Rectifiers - Arrays encompasses a variety of semiconductor components including rectifiers, transistors and opto-electronics. MURF10040, a high efficiency, high current, single Schottky diode array, falls into this category.
The MURF10040 has a variety of applications, such as servers and communications, automotive applications, and industrial equipment. It is typically used in the power supply design of data centers, gas turbine controllers, and automotive alternators.
The MURF10040 is designed to provide a number of advantages over conventional diode array designs, such as larger voltage drop, higher current handling capability and improved thermals. It also has a number of other features which make it suitable for different applications.
The architecture of the MURF10040 is based on a configuration of two Schottky diodes. Each Schottky diode is composed of a P-type and N-type material, forming a junction. This junction acts as a type of rectifier, allowing the device to control the flow of current in both directions.
The working principle of the MURF10040 is based on the Schottky effect. This is a form of thermionic emission which occurs when a high concentration of electrons are concentrated in a semiconductor material. In the MURF10040, this effect is utilized to increase the efficiency of the diode by allowing the electrons to travel across the interface between the two junctions, rather than dissipating energy as in conventional diode array designs.
The MURF10040 is a popular choice for many consumer electronics applications due to its high performance and low cost. It is also suitable for power supply design because it has a high level of efficiency and is relatively small in size.
In summary, MURF10040 is a high efficiency, high current, single Schottky diode array suitable for a variety of applications. It is used in servers and communications, automotive applications, and industrial equipment and is based on the Schottky effect for its working principle. The MURF10040 offers a number of advantages including larger voltage drop, higher current handling capability and improved thermals, making it a popular choice for many consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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