MURTA600120 Allicdata Electronics
Allicdata Part #:

MURTA600120-ND

Manufacturer Part#:

MURTA600120

Price: $ 59.37
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE GEN 1.2KV 300A 3 TOWER
More Detail: Diode Array 1 Pair Common Cathode Standard 1200V 3...
DataSheet: MURTA600120 datasheetMURTA600120 Datasheet/PDF
Quantity: 1000
18 +: $ 53.43870
Stock 1000Can Ship Immediately
$ 59.37
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower
Description

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MURTA600120 Application Field and Working Principle

MURTA600120 is a PN-junction rectifier type field effect transistor, which belongs to the Rectifier Array type of diodes. It is designed to control the flow direction and voltage of electric current. It is suited for applications where current flow is required to be maintained in one direction, such as AC to DC conversion, power conversion, voltage regulation and signal amplification.

MURTA600120 has an active device which contains both an N-type and a P-type region. This is separated by creating a reverse-biased junction between them. When an electric field is applied to the transistor, it allows current to flow in only one direction, based on the electric field’s polarity. This is known as rectification.

The MURTA600120’s key advantage is its ability to provide high current rectification without the need for additional external components. It is also efficient, since it behaves as a high-intensity diode. Being a rectifier type transistor also makes it effective for AC to DC conversion, which is a common application for these types of diodes.

The MURTA600120 is an ideal choice for high-current rectification of both signal and power. It is also suitable for power factor correction circuits and signal line filtering. Furthermore, it can be used for application-specific signalline filtering, such as Time-Division Multiplexing (TDM). It is also a good choice for applications where efficiency and reliability are critical.

One of the key benefits of the MURTA600120 is its low voltage drop and high reverse current blocking capability. These properties make it ideal for applications that require high currents and low power loss, such as solar photovoltaic cells and power converters. Furthermore, its low voltage drop makes it suitable for use in compact power supplies, such as those used in space-constrained applications.

The working principle of the MURTA600120 involves the control of current flow by the depletion and accumulation of charge carriers at the P-N junction. As current flows through the device, it behaves as a rectifier, allowing current flow in only one direction. Depending on the voltage applied to the transistor, a portion of the current will flow in the opposite direction, creating a reverse current leakage known as reverse saturation.

In summary, the MURTA600120 provides a reliable, cost-effective solution for applications that require reliable rectification of both signal and power. Its current flow control enables efficient AC to DC conversion, voltage and signal amplification, as well as efficient power factor correction and signal filtering. Furthermore, its low voltage drop, high blocking capabilities and efficient current rectification make it ideal for use in a range of power supply and signal conditioning designs.

The specific data is subject to PDF, and the above content is for reference

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