
MV1N8147US Circuit Protection |
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Allicdata Part #: | MV1N8147US-ND |
Manufacturer Part#: |
MV1N8147US |
Price: | $ 23.04 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 20.94640 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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TVS - Diodes
Transient Voltage Suppressors (TVS) diodes are semiconductor devices used for protecting circuits against voltage transients. They are also a type of Voltage Dependent Resistor (VDR) or Zener diode. The MV1N8147US is an example of a TVS diode.
Application Field
The MV1N8147US is a TVS diode built specifically for wireless LANs and Ethernet LANs. The device is able to protect signal lines and components from overvoltage and overcurrent transients, such as electrostatic discharge (ESD). Due to its low clamping voltage and low leakage current, the device is well suited for these applications. It can also be used for analog and digital signal protection, automotive voltage transients, and transient protection for industrial and home appliances.
Working Principle
The MV1N8147US is based on the same basic principle as other TVS diodes. An electric current is passed through the diode when an overvoltage or overcurrent occurs. This current is initially clamped to a safe level, protecting the circuit from damage and interfering with signal processing. A voltage source is then used to restore nominal voltage levels.
The MV1N8147US has two parts - the breakdown region and the clamping region. The breakdown region is the area where the diode will start conducting current. This voltage threshold is usually around 5V. The clamping region is the area where the current is fixed – usually around 8-14V.When the voltage exceeds the breakdown region, the diode starts conducting, and current flows from anode to cathode until the voltage across the diode reaches the clamping voltage, at which point the current flow stops and the voltage drops back down to a safe level.
The device is able to provide up to 500 watts of peak current, and offers excellent clamping ratio. The device also features very low clamp voltage and leakage current, making it suitable for use with high speed ICs and other sensitive components. It also has a low recovery time of up to 10ns, ensuring that the protection remains effective even when subject to rapid transients.
The device is also highly reliable, resistant to ESD and radiation. The diode is designed to limit the voltage by clamping the electric current, thereby reducing its impact on circuit components. This makes it highly effective for protecting circuits from damage caused by ESD or other overvoltage transients.
Conclusion
The MV1N8147US is an effective TVS diode used for protecting circuits against voltage transients. Due to its low clamping voltage and low leakage current, the device is well suited for wireless and Ethernet LANs, analog and digital signal protection, automotive voltage transients, and transient protection for industrial and home appliances. The device is highly reliable, resistant to ESD and radiation, and is able to provide up to 500 watts of peak current, making it an ideal choice for circuit protection.
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Part Number | Manufacturer | Price | Quantity | Description |
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MV1N8167US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8176US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8147US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
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MV1N8155 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8181 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8179 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8157US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8152 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8150 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8165US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8175US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8158 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8154US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8162US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8171 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8155US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8148 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8151 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8152US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8179US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8169 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8157 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8174US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8153 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8171US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8164 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8156US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8178US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8173 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8161 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8177US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8166 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8181US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8180 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8147 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8158US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8156 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8173US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8148US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
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