
Allicdata Part #: | MV1N8156US-ND |
Manufacturer Part#: |
MV1N8156US |
Price: | $ 23.04 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 20.94640 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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MV1N8156US is one of the TVS - Diodes developed by TE Connectivity. In essence, it is a two-terminal unidirectional device designed to protect sensitive electronics like computers and data lines from electrostatic discharge and transients. The device is small in size and features a low-profile design.
Design and Features
MV1N8156US is a 2-pin, surface-mount device that features a peak power rating of 400W. The breakdown voltage of the device ranges from 8 to 15 volts and the breakout voltage or the reverse standoff voltage is 5 volts. The device also features a capacitance of 0.1pF and an operating temperature range of -65 to 150 degrees Celsius. It is designed for use in industrial equipment, portable electronics, communication and consumer electronics.
Application Field and Working Principle
The primary application field of MV1N8156US is protecting sensitive I/O (input/output) circuits from electrostatic discharges and voltage transients. The device can also be used in many other applications such as cellular base stations, communication systems, computers, industrial equipment, automotive systems and military systems.
The working principle of MV1N8156US is similar to other TVS diodes. The device utilizes a voltage-dependent electrical field to clamped the voltage surges and protect the connected system. When the voltage rises, the device conducts and absorbs the excess current. When the voltage returns to its normal level, the device “opens” again and allows normal operation to continue.
Advantages
MV1N8156US offers some additional advantages apart from its basic features. The device has a low clamping voltage, which helps in avoiding damage to the connected system in case of an electrical overload. Moreover, the device has a low capacitance rating which helps to minimize signal distortion. The device is also rated for a wide operating temperature range and can handle high-power transients. This makes the device suitable for a variety of different applications. Additionally, the device is suitable for reflow soldering.
Conclusion
MV1N8156US from TE Connectivity is a two-terminal unidirectional device designed to protect sensitive electronics like computers and data lines from electrostatic discharges and voltage transients. It is a small, low-profile device that offers a peak power rating of 400W, a breakdown voltage of 8 to 15 volts, a breakout voltage of 5 volts and a capacitance of 0.1pF. In addition, the device is rated for a wide operating temperature range and can handle high-power transients. This makes the device suitable for a variety of different applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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MV1N8167US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8176US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8147US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8160 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8155 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8181 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8179 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8157US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8152 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8150 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8165US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8175US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8158 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8154US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8162US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8171 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8155US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8148 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8151 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8152US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8179US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8169 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8157 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8174US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8153 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8171US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8164 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8156US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8178US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8173 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8161 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8177US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8166 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8181US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8180 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8147 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8158US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8156 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
MV1N8173US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
MV1N8148US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
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