Allicdata Part #: | MVDF2C03HDR2G-ND |
Manufacturer Part#: |
MVDF2C03HDR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 30V 4.1A/3A 8SOIC |
More Detail: | Mosfet Array N and P-Channel Complementary 30V 4.1... |
DataSheet: | MVDF2C03HDR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel Complementary |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A, 3A |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 24V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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MVDF2C03HDR2G is a type of field-effect transistor (FET) array, a type of transistor which can be used to amplify signals or act as a switch. FET arrays are used in many different applications, including radios, audio systems and digital logic circuitry. Because they operate in a similar manner to other FETs, they share many of the same features and working principles.An FET array is composed of multiple transistors, each with its own gate, drain, and source connections. These connections are typically in series, meaning that the voltage and current flowing between them are the same. The transistors are then grouped together in an array, allowing them to share the same gate or input voltages. This allows the array to be configured for enhanced performance compared to individual FETs.The main advantage of an FET array is its ability to amplify the input signal without increasing overall current draw. FETs are very efficient in terms of power usage, so using a FET array can result in greater efficiency and lower power consumption compared to other amplifying components. Each individual transistor in the array is controlled separately, meaning that different parts of the signal can be amplified more or less, leading to greater control over the output.The MVDF2C03HDR2G is a dual-gate, depletion-mode FET array, meaning that the drains and sources are connected in series and the voltage and current remain the same. This makes it especially useful for applications such as analog switching and audio circuits, since it can be used to switch between two different signals or control the levels of a signal in a way that would not be possible with a single transistor. This can be useful in applications that require fine-tuning of audio signals or in applications where signals must be multiplexed.The MVDF2C03HDR2G can also be used to construct digital logic circuits. Since the FET array’s output is either fully on or fully off, it can be used to control the flow of digital signals between various components of a circuit. It can be used to create a wide variety of useful logic circuits, such as shift registers, timing circuits, and logic gates.In conclusion, the MVDF2C03HDR2G is a versatile, efficient FET array which can be used for a variety of applications, from analog switching to digital logic circuits. It offers superior control over signals, low power consumption, and increased efficiency compared to other components. It is an ideal choice for any project requiring an advanced FET array.
The specific data is subject to PDF, and the above content is for reference
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