Allicdata Part #: | MW4IC2230MBR1-ND |
Manufacturer Part#: |
MW4IC2230MBR1 |
Price: | $ 29.41 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC PWR AMP RF 28V 30W TO-272-16 |
More Detail: | RF Amplifier IC Cellular, CDMA, EDGE, GSM, TDMA, W... |
DataSheet: | MW4IC2230MBR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 26.73820 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 1.6GHz ~ 2.4GHz |
P1dB: | -- |
Gain: | 31dB |
Noise Figure: | -- |
RF Type: | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
Voltage - Supply: | 26V |
Current - Supply: | 60mA |
Test Frequency: | -- |
Package / Case: | TO-272-16 Variant, Flat Leads |
Supplier Device Package: | TO-272 WB-16 |
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MW4IC2230MBR1 is an RF amplifier designed to provide high-power amplifying capabilities. It is commonly used in applications that require high power, such as radio broadcasting and telemetry. This amplifier is designed to work with frequencies of up to 500MHz. It has two stages of amplification that can provide up to 20 watts of power in oscillator frequency ranges. Its working principle involves utilizing the RF performance qualities of the semi-conductor transistor and application field to achieve higher levels of efficiency.
The design of the MW4IC2230MBR1 can handle a wide range of input signal power levels and frequencies. It is able to amplify signals from 0.5 to 500MHz, with power levels ranging from 0.1 to 50 Watts. This makes it a versatile RF amplifier for many different applications. The amplifier is also designed with high isolation between its input and output ports, which further enhances its versatility.
This amplifier works primarily using the Heating Effect of Electrons (HEE) method. In this method, the electrons in the base region of the transistor are heated. This heats up the collector and emitter of the transistor, thus increasing the current gain. This increase in current gain is then used to amplify the signal.
In addition to the HEE method, the amplifier also employs the use of a tuned circuit. This tuned circuit consists of an inductor and a capacitance that acts as a filter. This tuned circuit helps to reduce noise, as well as limit the upper and lower frequency response of the amplifier, enabling improved performance.
To protect the amplifier from overloading, it is also equipped with a safety mechanism. This safety mechanism monitors the amount of power required by the amplifier, and shuts down the amplifier if the power level exceeds a certain limit. This helps to ensure that the amplifier does not get damaged due to overloading.
Finally, the MW4IC2230MBR1 is also designed for easy installation. The amplifier is designed to fit into most standard 19” racks, allowing for easy integration into existing systems. Additionally, the amplifier comes with an integrated mounting kit that can be used to install the amplifier in the rack.
Overall, the MW4IC2230MBR1 is a versatile RF amplifier that is suitable for a wide range of applications. It is designed to deliver high power amplifying capabilities, and comes with a variety of features that ensure that the amplifier performs optimally for its given application. As such, the MW4IC2230MBR1 is a great option for those looking for an RF amplifier for their high power application needs.
The specific data is subject to PDF, and the above content is for reference
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