Allicdata Part #: | MW6IC2015MBR1-ND |
Manufacturer Part#: |
MW6IC2015MBR1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC PWR AMP RF 26V 15W TO-272-16 |
More Detail: | RF Amplifier IC Cellular, W-CDMA, GSM, EDGE, TDMA,... |
DataSheet: | MW6IC2015MBR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 1.8GHz ~ 1.99GHz |
P1dB: | -- |
Gain: | 26dB |
Noise Figure: | -- |
RF Type: | Cellular, W-CDMA, GSM, EDGE, TDMA, CDMA |
Voltage - Supply: | 26V |
Current - Supply: | 100mA |
Test Frequency: | -- |
Package / Case: | TO-272-16 Variant, Flat Leads |
Supplier Device Package: | TO-272 WB-16 |
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RF amplifiers operate on the principle of amplifying a signal by using power input from a power supply. The RF amplifiers are classified according to the type of signal they are amplifying, the frequency range of the signal they are amplifying, and the application field it is being used in. One of these amplifier types is the MW6IC2015MBR1, which is an RF amplifier that is used in cellular base station applications.
The MW6IC2015MBR1 amplifier is designed to be used in cellular applications such as base station applications. It is a high power amplifier, capable of amplifying signals up to 2.6 GHz. This amplifier provides a power gain of up to 22 dB, a noise figure of under 5 dB, and a total input third-order Intercept Point (IIP3) of up to 40 dBm. It also offers high linearity with a third-order intercept (IP3) of up to 67 dBm for uncompensated conditions, and up to 77 dBm for compensated conditions.
The working principle of the MW6IC2015MBR1 amplifier is based on the use of a field effect transistor (FET). FET transistors are highly efficient devices that are used to amplify electrical signals. They operate by controlling the flow of electrons through a semiconductor material. The MW6IC2015MBR1 amplifier utilizes the FET transistor in combination with a series of components such as resistors, inductors, and capacitors, to amplify the electrical signal that passes through the device. Additionally, a power supply is required to provide the power input to the amplifier.
The MW6IC2015MBR1 amplifier is designed to provide a high level of performance in operations such as cellular base station applications. It offers high power gain, high linearity, and low noise figure. This is beneficial for applications that require low distortion and high power output. Furthermore, its FET transistor design ensures a high level of efficiency and reliability.
In conclusion, the MW6IC2015MBR1 amplifier is an RF amplifier that is designed to be used in cellular base station applications. It is designed to provide high performance with its FET design, high power gain, high linearity, and low noise figure. Moreover, it is designed to provide maximum efficiency and reliability in operations such as cellular base station applications.
The specific data is subject to PDF, and the above content is for reference
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