Allicdata Part #: | MWE6IC9100NBR1TR-ND |
Manufacturer Part#: |
MWE6IC9100NBR1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC PWR AMP RF LDMOS TO272-14 |
More Detail: | RF Amplifier IC GSM, EDGE 960MHz TO-272 WB-14 |
DataSheet: | MWE6IC9100NBR1 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 960MHz |
P1dB: | -- |
Gain: | 33.5dB |
Noise Figure: | -- |
RF Type: | GSM, EDGE |
Voltage - Supply: | 28V |
Current - Supply: | -- |
Test Frequency: | -- |
Package / Case: | TO-272-14 Variant, Flat Leads |
Supplier Device Package: | TO-272 WB-14 |
Description
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Application Field of MWE6IC9100NBR1
MWE6IC9100NBR1 is a type of RF amplifier designated for various amplifying and power loading applications. It uses a built-in technology to achieve optimal power performance. This type of amplifier is commonly used in different types of communication, data acquisition, ranging, navigation and most importantly, in radar systems.In its simplest form, an RF amplifier is a two-port active device which increases the power of an incoming signal. This amplification technique involves the conversion of small electrical signals to powerful radio-frequency signals. This type of amplifier is extremely beneficial in applications requiring both high levels of output power and improved signal-to-noise ratio.RF amplifiers have traditionally been used in applications such as powering large-scale transmitters, providing improved signal-to-noise ratio in receivers, and in high-power transmitters. They have since found applications in many other fields as well.Working Principle of MWE6IC9100NBR1
MWE6IC9100NBR1 is a hybrid linear radio frequency amplifier. It is able to amplify low-level signals with great accuracy and at high power levels. This is accomplished by combining a number of active and passive components in the circuit.In essence, the core of this RF amplifier is a type of transistor called an NPN (negative-plate-negative) bipolar junction transitor. This type of transistor can amplify both DC and low frequency signals, providing excellent gain and excellent linearity.The circuits which are used to drive the NPN transistors can be designed to satisfy the system’s current and voltage requirements. In addition, different feedback networks can be used to control the gain and bandwidth of the amplifier.The MWE6IC9100NBR1 is also equipped with several protection features in order to prevent the amplifier from being damaged by external electrical interference or abrupt voltage fluctuations. The amplifier is also designed to operate with low noise levels, allowing it to achieve greater signal-to-noise ratio than other amplifiers.In order to keep the temperature inside the amplifier as stable as possible, it is equipped with a fan system which helps to maintain the ideal temperature for the components. This ensures that the amplifier operates at its full power and output levels without any interruption or loss of power due to external temperature variations.The MWE6IC9100NBR1 is a very useful RF amplifier due to its combination of high gain, low-noise levels, improved linearity and built-in protection features. It is ideal for applications such as radio communication systems, data acquisition, ranging and navigation systems.The specific data is subject to PDF, and the above content is for reference
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