MWI200-06A8 Allicdata Electronics
Allicdata Part #:

MWI200-06A8-ND

Manufacturer Part#:

MWI200-06A8

Price: $ 98.35
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: TRANS 16BIT 3-PH 600V 115A
More Detail: IGBT Module NPT Three Phase Inverter 600V 225A 675...
DataSheet: MWI200-06A8 datasheetMWI200-06A8 Datasheet/PDF
Quantity: 1000
5 +: $ 89.41100
Stock 1000Can Ship Immediately
$ 98.35
Specifications
Current - Collector Cutoff (Max): 1.8mA
Base Part Number: MWI
Supplier Device Package: E3
Package / Case: E3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 9nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Power - Max: 675W
Current - Collector (Ic) (Max): 225A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Three Phase Inverter
IGBT Type: NPT
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MWI200-06A8 transistor is an insulated gate bipolar transistor (IGBT) module designed specifically for industrial applications requiring higher thermal performance and greater power. The module consists of an IGBT chip, a gate driver, and a Thermally Enhanced Aluminum Nitride (TEAAN) substrate that serve to provide superior power and heat management.

The module integrates a high-performance gate driver circuit to gate control an IGBT, allowing for greater flexibility and higher operating efficiency. The gate driver circuit contains an isolated driver board, featuring an isolated gate driver circuit, an opto-isolator, and a power supply. The driver board is connected to the IGBT chip via an interconnect that allows for fast and reliable gate voltage control.

The IGBT chip is designed to withstand maximum current, voltage, and temperature levels. It is capable of achieving fast switching speeds and improved power efficiency. The chip is also tolerant to high voltage and temperature fluctuations, making it ideal for industrial applications.

The module’s TEAAN substrate enables superior thermal performance and improved efficiency by providing an isolated path for high current and temperature signals. The substrate is designed to transfer heat away from the IGBT chip, ensuring that it remains at an optimal temperature. The substrate also provides a durable and reliable insulation layer that prevents the IGBT chip from damage due to thermal or electrical stress.

The MWI200-06A8 module is widely used in industrial applications such as renewable energy generation, automotive, and other high power applications. The module’s high power and heat management performance makes it ideal for applications that require fast switching speeds and maximum efficiency. The module’s TEAAN substrate ensures superior thermal performance, allowing it to achieve power levels far beyond those of conventional IGBTs.

In conclusion, the MWI200-06A8 is an advanced IGBT module designed specifically for industrial applications requiring superior power and thermal performance. The module features an integrated high-performance driver board, IGBT chip, and TEAAN substrate to ensure maximum efficiency and reliability. The module is ideal for high power applications such as renewable energy generation, automotive and more.

The specific data is subject to PDF, and the above content is for reference

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