Allicdata Part #: | MWI25-12E7-ND |
Manufacturer Part#: |
MWI25-12E7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT SIXPACK RBSOA 1200V E2 |
More Detail: | IGBT Module NPT Three Phase Inverter 1200V 52A 225... |
DataSheet: | MWI25-12E7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 400µA |
Base Part Number: | MWI |
Supplier Device Package: | E2 |
Package / Case: | E2 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 2nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 25A |
Power - Max: | 225W |
Current - Collector (Ic) (Max): | 52A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Three Phase Inverter |
IGBT Type: | NPT |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MWI25-12E7 is an insulated gate bipolar transistor (IGBT) module with a highly integrated gate driver. This type of module is composed of an IGBT chip, an insulated gate driver, protection components, and a housing module for the ancillary components. The module allows for the construction of high-performance gate drivers and allows for a higher voltage gate driver at a lower power consumption. In addition, the module also provides pre-configured safety functions, such as short-circuit protection, over-temperature protection, open circuit protection, and over-current protection.
Within the application fields of the MWI25-12E7 module, the primary purpose is the efficient control of medium to high power applications, such as motor drives, welding machines and UPS systems. In motor drives, the module enables fast and precise control of the motor’s speed and current, while in welding machines, it can provide reliable and consistent power delivery. In UPS systems, the insulation capability of the module helps to protect against electrical noise and interference and boosts system reliability.
The working principle of the MWI25-12E7 is based on the power semiconductor concept of the IGBT. This consists of a PIN diode between two transistors, with the PIN diode providing a voltage drop to isolate the two transistors. This allows for greater switching speeds compared to pure transistor switches and improved efficiency compared to conventional thyristors. The module’s integrated gate driver ensures fast switching of the IGBT chip and protects against surges. The internal protection system enables the module to self-correct any potential failure and restore fault conditions before the the system shuts down, ensuring reliability and precision control.
In conclusion, the MWI25-12E7 is an IGBT module suited for applications that require fast and efficient power management. Its high integration level and internal protection system allows for enhanced performance, improved efficiency, and greater system reliability. The module is designed for applications such as motor drives, welding machines and UPS systems, among others.
The specific data is subject to PDF, and the above content is for reference
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